{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"NCV57201DR2G","brand":"onsemi","brandSlug":"onsemi","productSlug":"NCV57201DR2G","canonicalUrl":"https://icboms.com/onsemi/NCV57201DR2G","factsUrl":"https://icboms.com/api/mcp/products/NCV57201DR2G","rawCanonicalId":null},"summary":{"shortDescription":"onsemi NCV57201DR2G Automotive AEC-Q100 isolated gate driver, 1kV isolation, 1.9A source / 2.3A sink, 800V bootstrap, 2-channel half-bridge, 8-SOIC, Tape & Reel.","salesMarkdown":"## Gate-drive parametrics for IGBT half-bridge designs The NCV57201DR2G is an isolated dual-channel gate driver from onsemi, part of the Automotive AEC-Q100 series, designed to drive IGBTs in half-bridge configurations. The 1.9 A source and 2.3 A sink peak output current charges and discharges the IGBT gate capacitance quickly — reducing the Miller plateau time and cutting switching losses in hard-switched bridges. With a 20 V supply rail and an 800 V maximum bootstrap voltage on the high side, this driver comfortably handles 400 V and 600 V DC bus systems common in automotive traction inverters and industrial motor drives. The 13 ns rise and 8 ns fall typical times deliver clean edge rates that minimise cross-conduction during dead-time transitions. ## 1 kV isolation — what it means for the BOM The 1 kV galvanic isolation rating separates the low-voltage control side from the high-voltage power stage. This eliminates ground loops and allows the low-side controller to reference a different ground potential than the half-bridge emitter — a requirement in any isolated gate-drive topology. The 8-SOIC narrow-body package keeps the footprint compact, fitting standard SOIC-8 land patterns. ROHS3 compliance means no exemptions for lead or other restricted substances, simplifying EU and global compliance declarations. The active lifecycle status confirms ongoing production — no last-time-buy or end-of-life pressure for this part. ## AEC-Q100 qualification and deployment context Qualified to AEC-Q100, the NCV57201DR2G is validated for automotive temperature grades and reliability stress — suitable for under-hood inverter modules, on-board chargers, and DC-DC converters that see engine-bay ambient temperatures. The independent channel architecture means each output can be driven from separate input signals, simplifying dead-time insertion in software. Surface-mount assembly in the 8-SOIC package — the narrow 3.90 mm body width fits standard reflow profiles. Tape & Reel and Cut Tape options cover both production reel quantities and prototype sampling.","metaTitle":"NCV57201DR2G onsemi Isolated Gate Driver, 8-SOIC, 1.9A/2.3A","metaDescription":"NCV57201DR2G onsemi isolated gate driver, 1kV isolation, 1.9A source / 2.3A sink, 800V bootstrap, AEC-Q100, 8-SOIC. Active production, ROHS3. Request quote.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q100","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Digital Isolators"],"specifications":{"Series":"Automotive, AEC-Q100","Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"IGBT","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"20V","Number of Drivers":"2","Driven Configuration":"Half-Bridge","Rise / Fall Time (Typ)":"13ns, 8ns","Supplier Device Package":"8-SOIC","High Side Voltage - Max (Bootstrap)":"800 V","Current - Peak Output (Source, Sink)":"1.9A, 2.3A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.92","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.01000","currency":"USD"},{"qty":10,"price":"$1.80900","currency":"USD"},{"qty":25,"price":"$1.70640","currency":"USD"},{"qty":100,"price":"$1.45400","currency":"USD"},{"qty":250,"price":"$1.36528","currency":"USD"},{"qty":500,"price":"$1.19462","currency":"USD"},{"qty":1000,"price":"$0.98983","currency":"USD"},{"qty":2500,"price":"$0.92156","currency":"USD"},{"qty":5000,"price":"$0.88743","currency":"USD"},{"qty":12500,"price":"$0.85652","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/06cbf7958099892c0f226d82fc750f4a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the peak output current of NCV57201DR2G?","answer":"The NCV57201DR2G delivers 1.9 A source and 2.3 A sink peak output. This drives the IGBT gate charge quickly, reducing switching losses in half-bridge topologies."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/onsemi/NCV57201DR2G","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/onsemi/NCV57201DR2G when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}