{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"MT57V512H36EF-5","brand":"Micron Technology","brandSlug":"micron","productSlug":"MT57V512H36EF-5","canonicalUrl":"https://icboms.com/micron/MT57V512H36EF-5","factsUrl":"https://icboms.com/api/mcp/products/MT57V512H36EF-5","rawCanonicalId":null},"summary":{"shortDescription":"Micron MT57V512H36EF-5, 18Mbit Synchronous SRAM, 512K x 36 organization, 200 MHz clock, 2.4 ns access time, 2.4V–2.6V supply, 165-FBGA, 0°C to 70°C.","salesMarkdown":"## 18 Mbit synchronous SRAM for high-bandwidth buffering The Micron MT57V512H36EF-5 is a 18 Mbit synchronous SRAM organized as 512K words by 36 bits. It runs at a 200 MHz clock frequency with a 2.4 ns access time, making it a fit for high-speed cache, network packet buffers, and DSP scratchpad memory where deterministic read-write latency matters. The 36-bit word width maps naturally to systems using parity or ECC protection without packing overhead. ## Sourcing and lifecycle The MT57V512H36EF-5 is listed as an active, current-production part. No last-time-buy or phase-out notices are in effect. For BOM planning, this means no forced redesign due to obsolescence risk in the near term. The part is available through independent distribution channels; availability and current pricing are confirmed at quote time against an RFQ.","metaTitle":"Micron MT57V512H36EF-5 18Mbit Synchronous SRAM, 2.4 ns Access Time","metaDescription":"MT57V512H36EF-5 18Mbit synchronous SRAM from Micron. 512K x 36, 200 MHz clock, 2.4 ns access time. 165-FBGA, commercial temp. Active part, available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["DC-DC Power Modules"],"specifications":{"Package":"Bulk","Technology":"SRAM - Synchronous","Access Time":"2.4 ns","Memory Size":"18Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"165-TBGA","Clock Frequency":"200 MHz","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"2.4V ~ 2.6V","Memory Organization":"512K x 36","Operating Temperature":"0°C ~ 70°C (TA)","Supplier Device Package":"165-FBGA (13x15)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$17.36","stockQuantity":0,"priceTiers":[{"qty":18,"price":"$17.36000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b9fbda30f327219bb2fee131ce5f1b1f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the operating temperature range of MT57V512H36EF-5?","answer":"The MT57V512H36EF-5 is rated for 0°C to 70°C (TA) — commercial temperature grade only."},{"question":"What is the exact package size of MT57V512H36EF-5?","answer":"The MT57V512H36EF-5 is supplied in a 165-ball FBGA with a 13x15 mm body (Supplier Device Package 165-FBGA)."},{"question":"Does MT57V512H36EF-5 have a replacement or equivalent part?","answer":"The MT57V512H36EF-5 is an active part with no official replacement. The listed peers (MT29F4G08, MT29F1G08, MT25QU256) are NAND Flash and serial NOR Flash — different memory technologies and interfaces, not functional equivalents for a synchronous SRAM design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/micron/MT57V512H36EF-5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/micron/MT57V512H36EF-5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-11T19:47:54.680Z","lastPublished":"2026-07-11T19:47:54.680Z","indexable":true}}