{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"MRFE6VS25GNR1","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"MRFE6VS25GNR1","canonicalUrl":"https://icboms.com/nxp/MRFE6VS25GNR1","factsUrl":"https://icboms.com/api/mcp/products/MRFE6VS25GNR1","rawCanonicalId":null},"summary":{"shortDescription":"NXP MRFE6VS25GNR1 LDMOS RF power transistor, 25W output at 512MHz, 25.4dB gain, 50V test supply, 133V rated voltage, TO-270-2 GULL surface-mount package, ROHS3 compliant.","salesMarkdown":"## RF power LDMOS for 512 MHz band The NXP MRFE6VS25GNR1 is an LDMOS RF power transistor designed for 512 MHz operation, delivering 25 W output with 25.4 dB gain at a 50 V test supply. The 133 V rated drain-source breakdown gives headroom for load mismatch and high-VSWR conditions common in RF power amplifier output stages. The TO-270-2 GULL package is a surface-mount, gull-wing leaded case with a large backside source tab for thermal conduction to the PCB ground plane. The 10 mA test current is typical for small-signal gain characterization; actual bias current in class-AB operation will be higher. ## Gain and power — what they mean for the PA stage The 133 V rated voltage means the device can survive transient overvoltage events up to that peak without avalanche failure, provided the thermal limit is respected. This is a ruggedness spec, not a continuous operating point. ## Package and mounting — TO-270-2 GULL The TO-270-2 GULL surface-mount package has two gull-wing leads plus a large source tab on the bottom. The tab must be soldered to a thermal-via array under the part to keep the junction temperature within limits at 25 W continuous output. The package footprint is smaller than a flanged bolt-down TO-272, saving board area in dense PA arrays. Cut Tape (CT) and Tape & Reel (TR) options are available for different assembly volumes. The surface-mount format suits automated pick-and-place lines, though the large tab may need a longer reflow profile for complete solder wetting. ## Lifecycle and compliance The MRFE6VS25GNR1 is listed as Active in production status and ROHS3 compliant. No end-of-life notification or last-time-buy window has been published. This is a current-design-in part for new RF power amplifier projects, not a phase-out risk.","metaTitle":"MRFE6VS25GNR1 RF MOSFET LDMOS, 25W, 512MHz, TO-270-2 GULL","metaDescription":"NXP MRFE6VS25GNR1 LDMOS RF power transistor, 25W output at 512MHz, 25.4dB gain, 50V test supply. TO-270-2 GULL surface mount. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Gain":"25.4dB","Package":"Tape & Reel (TR); Cut Tape (CT)","Frequency":"512MHz","Mounting Type":"Surface Mount","Current - Test":"10 mA","Package / Case":"TO-270BA","Power - Output":"25W","Voltage - Test":"50 V","Transistor Type":"LDMOS","Voltage - Rated":"133 V","lifecycle_stage":"eol_hot","Supplier Device Package":"TO-270-2 GULL"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$36.82","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$36.82000","currency":"USD"},{"qty":10,"price":"$33.95900","currency":"USD"},{"qty":25,"price":"$32.43320","currency":"USD"},{"qty":100,"price":"$31.67000","currency":"USD"},{"qty":500,"price":"$31.66998","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9ec571b2b8eade566764bd9018bce8f6.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is MRFE6VS25GNR1 obsolete?","answer":"No, the MRFE6VS25GNR1 is Active in production status. No discontinuation notice has been issued, and it remains a current-design-in part for new RF power amplifier projects."},{"question":"What is MRFE6VS25GNR1's gain and power output?","answer":"The device delivers 25.4 dB gain and 25 W output at 512 MHz when tested at 50 V supply and 10 mA quiescent current. These are the headline small-signal and saturated power ratings for the part."},{"question":"What are the typical applications for MRFE6VS25GNR1?","answer":"This LDMOS transistor is suited for RF power amplifier stages in ISM-band (industrial, scientific, medical) equipment at 512 MHz, UHF broadcast transmitters, and land-mobile radio base stations. The 50 V supply rail and 25 W output level fit medium-power PA designs where efficiency and gain are critical."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/MRFE6VS25GNR1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/MRFE6VS25GNR1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}