{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"MRFE6S9060NR1","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"MRFE6S9060NR1","canonicalUrl":"https://icboms.com/nxp/MRFE6S9060NR1","factsUrl":"https://icboms.com/api/mcp/products/MRFE6S9060NR1","rawCanonicalId":null},"summary":{"shortDescription":"NXP MRFE6S9060NR1 LDMOS RF power transistor, 66V rated, 880 MHz, 21.1 dB gain, 14 W output power, TO-270AA surface-mount package.","salesMarkdown":"## RF power transistor for 880 MHz base-station and ISM amplifiers The NXP MRFE6S9060NR1 is an LDMOS FET designed for 880 MHz RF power amplification, delivering 14 W output with 21.1 dB gain when biased at 28 V and 450 mA quiescent current. The 66 V drain-source rating provides headroom for mismatched loads and high-VSWR conditions common in cellular infrastructure and industrial RF heating applications. In a 50-ohm system, the 21.1 dB gain figure means a typical driver stage needs only about 100 mW of drive power to reach full rated output, which simplifies the gain chain and reduces the number of pre-driver stages. ## Surface-mount TO-270-2 — footprint and thermal management It is not a through-hole bolt-down package; the board-level footprint uses the large-source-tab pad for both electrical connection and heat sinking. Thermal management requires a copper spreader and thermal vias under the source tab to keep the junction within limits at the 14 W continuous output level.","metaTitle":"NXP MRFE6S9060NR1 RF LDMOS Transistor, 14W at 880MHz","metaDescription":"NXP MRFE6S9060NR1 LDMOS FET, 66V rated, 21.1dB gain at 880MHz, 14W output power. Active lifecycle, TO-270AA package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Gain":"21.1dB","Package":"Tape & Reel (TR); Cut Tape (CT)","Frequency":"880MHz","Mounting Type":"Surface Mount","Current - Test":"450 mA","Package / Case":"TO-270AA","Power - Output":"14W","Voltage - Test":"28 V","Transistor Type":"LDMOS","Voltage - Rated":"66 V","lifecycle_stage":"eol_hot","Supplier Device Package":"TO-270-2"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$48.4","priceTiers":[{"qty":1,"price":"$48.40000","currency":"USD"},{"qty":10,"price":"$45.15400","currency":"USD"},{"qty":25,"price":"$44.88360","currency":"USD"},{"qty":500,"price":"$44.88342","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b2e29fc8048a3c4ec398970a5ecffb53.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/MRFE6S9060NR1/alternatives.json"},"ai":{"faq":[{"question":"What is MRFE6S9060NR1's gain at 880 MHz?","answer":"The datasheet specifies a gain of 21.1 dB at 880 MHz under the test conditions of 28 V drain voltage and 450 mA quiescent current. This gain figure is the small-signal or rated gain at the fundamental frequency; it is the number to use for link-budget calculations in the driver stage design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/MRFE6S9060NR1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/MRFE6S9060NR1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}