{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"MAX2602ESA+","brand":"Analog Devices","brandSlug":"analog-devices","productSlug":"MAX2602ESA","canonicalUrl":"https://icboms.com/analog-devices/MAX2602ESA","factsUrl":"https://icboms.com/api/mcp/products/MAX2602ESA%2B","rawCanonicalId":null},"summary":{"shortDescription":"Analog Devices MAX2602ESA+ NPN RF transistor, 15V Vceo, 1GHz fT, 11.6dB gain, 3.3dB NF @ 836MHz, 1.2A Ic, 8-SOIC-EP, Tube.","salesMarkdown":"## RF transistor for 836 MHz band power stages The MAX2602ESA+ is an NPN RF transistor from Analog Devices, designed for driver and output stages in the 836 MHz cellular band. Its 11.6 dB gain at that frequency means a single stage can lift a 0 dBm input to over +11 dBm before the next stage clips — useful for GSM/EDGE power amplifier chains where every dB of stage gain saves a bias current budget. Rated 15 V collector-emitter breakdown and 1.2 A max collector current, it handles the voltage swing and peak current of a 6.4 W class-AB PA stage without collapsing the Vce margin. The 1 GHz transition frequency gives enough fT headroom for the 900 MHz band — the gain roll-off at the operating frequency stays flat. ## Gain and noise figure at 836 MHz At 836 MHz the noise figure is 3.3 dB typ — this sets the receiver front-end sensitivity floor. For a transmit driver stage the noise figure is less critical, but in a T/R switch application the same transistor sees both paths, so the 3.3 dB NF keeps the receive noise penalty under 0.5 dB when the PA is biased off. DC current gain is a minimum of 100 at 250 mA, 3 Vce — this means the base drive current stays under 2.5 mA for a 250 mA collector current, well within the range of a standard CMOS GPIO driving through a series resistor. The hFE floor at low Vce also confirms the transistor is fully saturated at the 3 V rail, not just at 5 V. ## Package and thermal interface The 150°C junction temperature rating means the die can run hot — the limiting factor is the board's ability to sink the 6.4 W through the exposed pad without exceeding the FR4 glass transition. A 2-oz copper pour under the pad with at least 12 thermal vias is the typical layout. Surface-mount assembly on standard 8-SOIC footprint — no special reflow profile beyond the standard lead-free ramp. The exposed pad requires a solder paste stencil aperture at least 50 % of the pad area to avoid voids under the die attach. ## Active production and compliance Supplied in tube packaging — 50 units per tube, ESD-safe. For reel-fed pick-and-place lines the tube can be cut and the parts bulk-loaded into a vibratory feeder or hand-placed for prototype runs.","metaTitle":"MAX2602ESA+ RF Trans NPN 15V 1GHz, 11.6dB Gain, 8-SOIC","metaDescription":"Active Analog Devices NPN RF transistor, 15V Vceo, 1GHz fT, 11.6dB gain, 3.3dB NF. 8-SOIC-EP package. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["DC-DC Power Modules"],"specifications":{"Gain":"11.6dB","Package":"Tube","Power - Max":"6.4W","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width) Exposed Pad","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"1GHz","Supplier Device Package":"8-SOIC-EP","Noise Figure (dB Typ @ f)":"3.3dB @ 836MHz","Current - Collector (Ic) (Max)":"1.2A","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 250mA, 3V","Voltage - Collector Emitter Breakdown (Max)":"15V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.04","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$7.04000","currency":"USD"},{"qty":10,"price":"$6.28700","currency":"USD"},{"qty":25,"price":"$5.65840","currency":"USD"},{"qty":100,"price":"$5.15550","currency":"USD"},{"qty":250,"price":"$4.65256","currency":"USD"},{"qty":500,"price":"$4.17474","currency":"USD"},{"qty":1000,"price":"$3.52086","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the gain and noise figure of MAX2602ESA+ at 836 MHz?","answer":"At 836 MHz the typical gain is 11.6 dB and the noise figure is 3.3 dB. This combination suits driver stages in 900 MHz band power amplifiers where gain per stage is critical and the noise floor must stay below the receiver sensitivity budget."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/analog-devices/MAX2602ESA","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/analog-devices/MAX2602ESA when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}