{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"LMG3411R070RWHT","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"LMG3411R070RWHT","canonicalUrl":"https://icboms.com/texas-instruments/LMG3411R070RWHT","factsUrl":"https://icboms.com/api/mcp/products/LMG3411R070RWHT","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments LMG3411R070RWHT, 600-V 70-mOhm GaN FET with integrated driver, single high-side output, 12A max, 9.5V-18V supply, 32-VQFN Exposed Pad, -40 to 125°C.","salesMarkdown":"## GaN power stage with integrated driver — what the 70 mOhm Rds(on) means for the BOM The Texas Instruments LMG3411R070RWHT is a 600 V GaN FET with an integrated gate driver, bootstrap circuit, and 5 V regulated output, all in a 32-VQFN Exposed Pad package. The headline 70 mOhm typical Rds(on) sets the conduction loss floor for a high-side load switch rated to 480 V maximum load voltage and 12 A continuous output. That Rds(on) figure is the number to size the heatsinking against: at 12 A the I²R loss hits about 10 W, so the exposed pad on the 32-VQFN (8x8 mm) needs a solid via-stitched thermal land on the PCB to keep junction temperature inside the -40 to 125 °C operating range. The integrated bootstrap and 5 V regulator eliminate the external bootstrap diode and a separate LDO for the high-side gate drive supply, pulling two to three passives off the BOM. ## Protection set and supply rail requirements The part integrates over-current, over-temperature, and UVLO fault protection, so a separate comparator-based protection circuit is not needed. The Vcc/Vdd supply range is 9.5 V to 18 V — design the bias rail for at least 10 V to hold margin through UVLO threshold. The PWM logic interface accepts a non-inverting input and drives a P-channel output configuration in a 1:1 input-to-output ratio. That means a single PWM signal from a controller or MCU directly controls the high-side switch; no level-shifter or dead-time generator is required because the integrated driver handles the bootstrap refresh. ## Lifecycle and sourcing posture For a BOM line that needs a GaN FET with integrated driver at this 70 mOhm / 480 V / 12 A rating, this is the current-production part to qualify.","metaTitle":"LMG3411R070RWHT GaN FET with Integrated Driver, 70 mOhm","metaDescription":"LMG3411R070RWHT 600V GaN FET with integrated driver, 70 mOhm Rds(on), 12A output, 32-VQFN. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Features":"Bootstrap Circuit, 5V Regulated Output","Interface":"Logic, PWM","Input Type":"Non-Inverting","Output Type":"P-Channel","Switch Type":"Load Switch","Rds On (Typ)":"70mOhm","Mounting Type":"Surface Mount","Package / Case":"32-VQFN Exposed Pad","Voltage - Load":"480V (Max)","lifecycle_stage":"eol_hot","Fault Protection":"Over Current, Over Temperature, UVLO","Number of Outputs":"1","Output Configuration":"High Side","Ratio - Input:Output":"1:1","Operating Temperature":"-40°C ~ 125°C (TJ)","Current - Output (Max)":"12A","Supplier Device Package":"32-VQFN (8x8)","Voltage - Supply (Vcc/Vdd)":"9.5V ~ 18V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$15.49","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$15.49000","currency":"USD"},{"qty":10,"price":"$14.23900","currency":"USD"},{"qty":25,"price":"$13.64840","currency":"USD"},{"qty":100,"price":"$12.02550","currency":"USD"},{"qty":250,"price":"$11.43528","currency":"USD"},{"qty":500,"price":"$10.69752","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/abdbc2d40095069cbf121bc9331579e7.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of LMG3411R070RWHT?","answer":"The typical Rds(on) is 70 mOhm. That is the on-resistance at nominal operating conditions; the actual value shifts with junction temperature and gate drive voltage, but 70 mOhm is the number to use for first-pass conduction loss estimates."},{"question":"What is the difference between LMG3411R070RWHT and other GaN FETs with integrated driver?","answer":"The key differentiator is the 70 mOhm Rds(on) at a 480 V load voltage rating, combined with the integrated bootstrap circuit and 5 V regulated output that reduce external BOM count. Many competing GaN parts require an external bootstrap diode or a separate 5 V supply for the driver. The 32-VQFN (8x8 mm) package with exposed pad is a standard footprint for this power level, so PCB layout migration from other 8x8 QFN GaN parts is usually straightforward."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/LMG3411R070RWHT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/LMG3411R070RWHT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}