{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"LM5111-1M","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"LM5111-1M","canonicalUrl":"https://icboms.com/texas-instruments/LM5111-1M","factsUrl":"https://icboms.com/api/mcp/products/LM5111-1M","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments LM5111-1M low-side gate driver, dual independent channels, 3A source / 5A sink peak output, non-inverting input, 8-SOIC package, -40°C to 125°C.","salesMarkdown":"## Gate drive parametrics for the switching stage The Texas Instruments LM5111-1M is a dual low-side gate driver designed to drive N-channel MOSFETs. Each channel delivers 3 A peak source and 5 A peak sink current, which means the driver can charge and discharge the gate capacitance of a power MOSFET quickly enough to keep switching losses within budget at moderate frequencies. Typical rise and fall times are 14 ns and 12 ns respectively, driven into a specified load. This edge rate, combined with the 3.5 V to 14 V supply range, covers the gate-drive voltage for most 5 V and 12 V logic rails and the corresponding MOSFET threshold windows. The part is RoHS non-compliant per the current listing, which is a consideration for BOMs that require full RoHS exemption documentation.","metaTitle":"Texas Instruments LM5111-1M Low-Side Gate Driver, 3A/5A","metaDescription":"Texas Instruments LM5111-1M dual low-side gate driver. 3A source, 5A sink peak output. 14ns/12ns rise/fall. Active production. 8-SOIC package. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"RoHS non-compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Package":"Bulk","Gate Type":"N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"3.5V ~ 14V","Number of Drivers":"2","Driven Configuration":"Low-Side","Operating Temperature":"-40°C ~ 125°C (TJ)","Rise / Fall Time (Typ)":"14ns, 12ns","Supplier Device Package":"8-SOIC","Logic Voltage - VIL, VIH":"0.8V, 2.2V","Current - Peak Output (Source, Sink)":"3A, 5A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.94","priceTiers":[{"qty":321,"price":"$0.94000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c55d2cd4c9b324d99a45b741d1ebfa4e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/LM5111-1M/alternatives.json"},"ai":{"faq":[{"question":"What is the LM5111-1M's gate type and driven configuration?","answer":"The LM5111-1M drives N-channel MOSFETs in a low-side configuration. Each of the two independent channels is non-inverting, meaning a logic high on the input turns the output high."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/LM5111-1M","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/LM5111-1M when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}