{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"LM5102SD","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"LM5102SD","canonicalUrl":"https://icboms.com/texas-instruments/LM5102SD","factsUrl":"https://icboms.com/api/mcp/products/LM5102SD","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments LM5102SD half-bridge gate driver, 2-channel independent, N-channel MOSFET, 1.6A peak output, 9-14V supply, 10-WDFN exposed pad, surface mount.","salesMarkdown":"## Half-bridge driver for N-channel MOSFETs — 1.6 A peak, 118 V bootstrap The LM5102SD is a Texas Instruments half-bridge gate driver built for driving two N-channel MOSFETs in a high-side/low-side configuration. It delivers 1.6 A peak source and 1.6 A peak sink current, which is enough to charge and discharge the gate capacitance of medium-power MOSFETs in a 600 ns typical rise/fall time. The bootstrap supply on the high side handles up to 118 V, so this part fits into 48 V or 72 V bus systems, or even lower-voltage battery stacks, without needing a separate isolated supply for the top FET. Supply range is 9 V to 14 V, which aligns with standard 12 V bias rails common in industrial and automotive auxiliary supplies. ## Package and thermal — 10-WSON with exposed pad The LM5102SD comes in a 10-WDFN package with an exposed pad (supplier device package 10-WSON 4x4 mm). The 600 ns rise/fall time means the switching losses are moderate, but the thermal pad is still essential if the driver is running at high frequency or driving a large gate charge. The two driver channels are independent, so the low-side and high-side outputs can be controlled separately. The non-inverting input type means the output follows the input logic level — no inversion to confuse the timing when pairing with a PWM controller.","metaTitle":"Texas Instruments LM5102SD Half-Bridge Gate Driver","metaDescription":"Active TI LM5102SD half-bridge gate driver for N-channel MOSFETs, 1.6A peak source/sink, 9-14V supply, 10-WSON package. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"RoHS non-compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Package":"Bulk","Gate Type":"N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"10-WDFN Exposed Pad","lifecycle_stage":"eol_hot","Voltage - Supply":"9V ~ 14V","Number of Drivers":"2","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 125°C (TJ)","Rise / Fall Time (Typ)":"600ns, 600ns","Supplier Device Package":"10-WSON (4x4)","Logic Voltage - VIL, VIH":"0.8V, 2.2V","High Side Voltage - Max (Bootstrap)":"118 V","Current - Peak Output (Source, Sink)":"1.6A, 1.6A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.29","stockQuantity":0,"priceTiers":[{"qty":233,"price":"$1.29000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6673eb6468810fb88cb1e9330c1c6815.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Where can I buy LM5102SD and how do I get a price?","answer":"Submit an RFQ for the quantity you need."},{"question":"What is LM5102SD's listed gate type?","answer":"The LM5102SD is designed to drive N-Channel MOSFETs in a half-bridge configuration. It provides 1.6 A peak source and sink current with 600 ns typical rise/fall times."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/LM5102SD","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/LM5102SD when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}