{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"LM5100AMR/NOPB","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"LM5100AMR-NOPB","canonicalUrl":"https://icboms.com/texas-instruments/LM5100AMR-NOPB","factsUrl":"https://icboms.com/api/mcp/products/LM5100AMR%2FNOPB","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments LM5100AMR/NOPB, half-bridge gate driver, 2 independent channels, N-Channel MOSFET, 9V-14V supply, 118V bootstrap, 3A peak source/sink, 430ns/260ns rise/fall, -40°C to 125°C, 8-PowerSOIC with PowerPad, surface mount.","salesMarkdown":"## Half-bridge gate driver for N-channel MOSFETs The Texas Instruments LM5100AMR/NOPB is a half-bridge gate driver designed to drive two N-channel MOSFETs in a half-bridge or full-bridge topology. It delivers 3A peak source and 3A peak sink current to the gate, with independent high-side and low-side channels. The bootstrap supply supports a high-side voltage up to 118 V, making it suitable for motor drives, DC-DC converters, and inverter stages where the floating high-side rail must ride above a switching node. The part operates from a 9V to 14V supply and is specified over the -40°C to 125°C junction temperature range. ## Rise and fall times — what they mean for switching Typical rise time is 430 ns and fall time is 260 ns. ## Package and thermal management The LM5100AMR/NOPB comes in an 8-PowerSOIC package with an exposed PowerPad. The PowerPad must be soldered to a copper area on the PCB to carry heat away from the die. ## Supply and logic interface The supply range is 9V to 14V, which is typical for a gate-drive bias rail derived from a 12V bus. The logic input threshold is specified with VIL at 2.3V minimum; The input is non-inverting, meaning a logic high on the input turns on the corresponding output. The two channels are independent, so you can drive the high-side and low-side MOSFETs with separate PWM signals as long as dead-time is handled externally.","metaTitle":"LM5100AMR/NOPB Half-Bridge Gate Driver, 3A Peak","metaDescription":"Texas Instruments LM5100AMR/NOPB half-bridge N-channel MOSFET gate driver. 9V-14V supply, 118V bootstrap, 3A peak output, 8-SO PowerPad. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Package":"Tube","Gate Type":"N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"8-PowerSOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"9V ~ 14V","Number of Drivers":"2","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 125°C (TJ)","Rise / Fall Time (Typ)":"430ns, 260ns","Supplier Device Package":"8-SO PowerPad","Logic Voltage - VIL, VIH":"2.3V, -","High Side Voltage - Max (Bootstrap)":"118 V","Current - Peak Output (Source, Sink)":"3A, 3A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.84","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.84000","currency":"USD"},{"qty":10,"price":"$3.45100","currency":"USD"},{"qty":25,"price":"$3.26280","currency":"USD"},{"qty":100,"price":"$2.82770","currency":"USD"},{"qty":250,"price":"$2.68264","currency":"USD"},{"qty":500,"price":"$2.40714","currency":"USD"},{"qty":1000,"price":"$2.05200","currency":"USD"}]},"links":{"datasheetUrl":"http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2FLM5101A","sourceUrl":null},"ai":{"faq":[{"question":"Are there equivalent gate drivers to LM5100AMR/NOPB?","answer":"The LM5106MM/NOPB is a functional alternative with faster rise/fall times (15ns, 10ns) and a lower peak output current of 1.2A. Verify pin compatibility and bootstrap ratings before substituting."},{"question":"Is LM5100AMR/NOPB suitable for driving SiC MOSFETs?","answer":"The 118 V bootstrap voltage covers many SiC MOSFETs rated at 650V or 1200V, but the 3A peak drive and 430ns rise time may be too slow for SiC's fast switching requirements. SiC typically needs higher peak current and faster edge rates to minimize switching losses. Evaluate against your specific SiC gate charge and switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/LM5100AMR-NOPB","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/LM5100AMR-NOPB when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}