{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"L6498DTR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"L6498DTR","canonicalUrl":"https://icboms.com/stmicroelectronics/L6498DTR","factsUrl":"https://icboms.com/api/mcp/products/L6498DTR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics L6498DTR, high-side or low-side gate driver for IGBT and N-channel MOSFET, 2A source / 2.5A sink peak output, 500V bootstrap, 25ns rise/fall, 8-SOIC package, -40 to 125°C.","salesMarkdown":"## High-side/low-side driver with 500 V bootstrap — what the ratings mean for the switching stage The STMicroelectronics L6498DTR is a high-side or low-side gate driver for IGBTs and N-channel MOSFETs. Peak output is 2 A source and 2.5 A sink. The 500 V maximum bootstrap voltage sets the high-side rail ceiling. Matched 25 ns rise and fall times simplify dead-time programming. Supply range is 10 V to 20 V. Input thresholds are CMOS/TTL-compatible with VIL of 1.45 V and VIH of 2 V. ## Temperature grade and package — industrial and automotive environments Rated for junction temperatures from -40°C to 125°C, the L6498DTR handles the thermal extremes found in motor-drive cabinets, outdoor telecom rectifiers, and under-hood automotive inverter modules. The 8-SOIC package with a 3.90 mm body width fits standard SOIC-8 land patterns and keeps the board footprint small. Surface-mount assembly is the norm for reflow-soldered power stages. The two driver channels are independent, so the part can also be used as a dual low-side driver if the bootstrap diode is not needed. ## Sourcing and lifecycle — active, ROHS3, no LTB risk The part is listed as Active with ROHS3 compliance. No end-of-life notice or last-time-buy window is tracked. It is available through independent distribution channels and can be quoted to order against an RFQ.","metaTitle":"STMicroelectronics L6498DTR Gate Driver, 2A/2.5A 8-SOIC","metaDescription":"ST L6498DTR high-side/low-side gate driver for IGBT/N-MOSFET. 2A source, 2.5A sink peak output. 500V bootstrap. -40 to 125°C. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"IGBT, N-Channel MOSFET","Input Type":"CMOS/TTL","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"10V ~ 20V","Number of Drivers":"2","Driven Configuration":"High-Side or Low-Side","Operating Temperature":"-40°C ~ 125°C (TJ)","Rise / Fall Time (Typ)":"25ns, 25ns","Supplier Device Package":"8-SOIC","Logic Voltage - VIL, VIH":"1.45V, 2V","High Side Voltage - Max (Bootstrap)":"500 V","Current - Peak Output (Source, Sink)":"2A, 2.5A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.55","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.55000","currency":"USD"},{"qty":10,"price":"$2.28700","currency":"USD"},{"qty":25,"price":"$2.15760","currency":"USD"},{"qty":100,"price":"$1.83830","currency":"USD"},{"qty":250,"price":"$1.72608","currency":"USD"},{"qty":500,"price":"$1.51032","currency":"USD"},{"qty":1000,"price":"$1.25142","currency":"USD"},{"qty":2500,"price":"$1.16511","currency":"USD"},{"qty":5000,"price":"$1.12196","currency":"USD"}]},"links":{"datasheetUrl":"https://www.st.com/content/ccc/resource/technical/document/datasheet/group3/10/8a/e6/12/f8/e8/49/ce/DM00366438/files/DM00366438.pdf/jcr:content/translations/en.DM00366438.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the L6498DTR's listed gate type?","answer":"The L6498DTR is specified to drive IGBTs and N-channel MOSFETs. The CMOS/TTL-compatible input accepts logic-level signals from a microcontroller or DSP."},{"question":"Is L6498DTR compatible with IGBT drivers?","answer":"Yes. The gate type is explicitly IGBT and N-Channel MOSFET, and the 2 A source / 2.5 A sink peak output is sufficient to drive the gate capacitance of typical IGBT modules in the 600 V class."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/L6498DTR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/L6498DTR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}