{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"L6491DTR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"L6491DTR","canonicalUrl":"https://icboms.com/stmicroelectronics/L6491DTR","factsUrl":"https://icboms.com/api/mcp/products/L6491DTR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics L6491DTR, Half-Bridge Gate Driver IC, IGBT/N-Channel MOSFET, Non-Inverting Input, Independent Channels, 4A Peak Output, 600V Bootstrap, 10V-20V Supply, 15ns Rise/Fall, -40°C to 125°C, 14-SOIC Package, Tape & Reel.","salesMarkdown":"## Half-bridge gate driver with 4A drive and 600V bootstrap The STMicroelectronics L6491DTR is a half-bridge gate driver IC for IGBTs and N-channel MOSFETs. It delivers 4A peak source and 4A peak sink current, with a bootstrap supply rated to 600 V maximum. The 15 ns typical rise and fall times are matched. Supply range spans 10 V to 20 V, and logic input thresholds sit at 1.45 V (VIL) and 2 V (VIH). ## Temperature grade and deployment environment Rated for junction temperature from -40°C to 125°C, this driver suits industrial motor drives and outdoor power-factor-correction stages. The 14-SO package (3.90 mm body width) keeps a small footprint on the PCB. ## Lifecycle and sourcing posture The L6491DTR carries an active lifecycle status with ROHS3 compliance. For current-production BOMs this means no supply-risk flag; for new designs it is a safe selection without an imminent obsolescence clock. ## Bootstrap capability and application fit Yes, the L6491DTR has a bootstrap capability — the high-side driver uses an external bootstrap diode and capacitor to generate the floating supply, with a maximum high-side voltage of 600 V. This is the standard architecture for half-bridge gate drivers in motor-drive inverters, UPS systems, and switched-mode power supplies where the DC bus sits below 600 V. The independent channel architecture means the low-side and high-side outputs operate with separate timing control, which simplifies dead-time insertion in firmware or via external logic.","metaTitle":"STMicroelectronics L6491DTR Half-Bridge Gate Driver","metaDescription":"ST L6491DTR half-bridge gate driver for IGBT/N-channel MOSFET. 4A peak source/sink, 600V bootstrap, 15ns rise/fall, -40 to 125°C. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"IGBT, N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"14-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"10V ~ 20V","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 125°C (TJ)","Rise / Fall Time (Typ)":"15ns, 15ns","Supplier Device Package":"14-SO","Logic Voltage - VIL, VIH":"1.45V, 2V","High Side Voltage - Max (Bootstrap)":"600 V","Current - Peak Output (Source, Sink)":"4A, 4A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.71","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.71000","currency":"USD"},{"qty":10,"price":"$2.43800","currency":"USD"},{"qty":25,"price":"$2.29960","currency":"USD"},{"qty":100,"price":"$1.95930","currency":"USD"},{"qty":250,"price":"$1.83972","currency":"USD"},{"qty":500,"price":"$1.60976","currency":"USD"},{"qty":1000,"price":"$1.51865","currency":"USD"},{"qty":2500,"price":"$1.51865","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1800da7cb082aaf8f0015ff337637ff2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does L6491DTR have a bootstrap capability?","answer":"Yes, the high-side driver uses an external bootstrap diode and capacitor to generate the floating supply rail, supporting a maximum high-side voltage of 600 V."},{"question":"What is the closest pin-compatible alternative to L6491DTR?","answer":"Within the same ST family, the L6491D is the standard-tube variant of the same die in the same 14-SOIC package — the L6491DTR is simply the tape-and-reel version. For a parametric alternative, parts with higher or lower peak current ratings (e.g., 2 A or 9 A siblings in the L649x series) share the same footprint but differ in drive strength and may require bootstrap component adjustments."},{"question":"What is the L6491DTR gate type?","answer":"The L6491DTR is specified for IGBT and N-channel MOSFET gates. The non-inverting input and independent channel architecture make it suitable for driving both device types in half-bridge configurations."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/L6491DTR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/L6491DTR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}