{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"ITF86130SK8T","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"ITF86130SK8T","canonicalUrl":"https://icboms.com/renesas/ITF86130SK8T","factsUrl":"https://icboms.com/api/mcp/products/ITF86130SK8T","rawCanonicalId":null},"summary":{"shortDescription":"N-channel MOSFET, 30 V drain-source, 14 A continuous drain current, 7.8 mOhm max on-resistance at 10 V gate drive, surface-mount package, -55°C to 150°C junction temperature range.","salesMarkdown":"## 30 V, 14 A N-channel — conduction loss and gate drive The ITF86130SK8T: The 7.8 mOhm Rds(on) at 14 A and 10 V sets the conduction-loss floor for a switching regulator or load switch. Gate threshold voltage maxes at 2.5 V at 250 µA. Total gate charge is 84 nC at 10 V. The ±20 V maximum gate-source rating gives extra headroom over the common ±12 V or ±16 V limits — useful when driving from a 15 V rail or in circuits with gate-drive ringing that might otherwise stress a tighter Vgs limit. ## Temperature range and package fit The 2.5 W power dissipation rating sets the thermal budget for a given ambient — actual continuous current derates with temperature per the datasheet's normalised curve. Surface-mount package suited for reflow assembly. The bulk shipping form means the part arrives in tubes or trays, not tape-and-reel — factor that into the pick-and-place feeder setup if the line expects reeled parts.","metaTitle":"ITF86130SK8T N-Channel MOSFET, 30 V, 14 A, 7.8 mOhm Rds(on)","metaDescription":"ITF86130SK8T N-channel MOSFET: 30 V drain-source, 14 A continuous, 7.8 mOhm Rds(on) at 10 V, ±20 Vgs max, -55 to 150°C junction.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","power_w":"2.5","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.003","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"30.0","Vgs(Th) (Max) @ Id":"2.5 V @ 250µA","switching_current_a":"14.0","Rds On (Max) @ Id, Vgs":"7.8mOhm @ 14 A, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"84 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.02","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7f95e6cb992ce099cdd43e541d1a8d6d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the ITF86130SK8T's Vgs rating?","answer":"The gate-source voltage absolute maximum is ±20 V, wider than the typical ±12 V or ±16 V limit on many 30 V N-channel MOSFETs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/ITF86130SK8T","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/ITF86130SK8T when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}