{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"ISP650P06NMXTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"ISP650P06NMXTSA1","canonicalUrl":"https://icboms.com/infineon/ISP650P06NMXTSA1","factsUrl":"https://icboms.com/api/mcp/products/ISP650P06NMXTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ ISP650P06NMXTSA1, P-Channel MOSFET, 60 V Vdss, 3.7 A continuous drain, 65 mOhm Rds(on) max at 10 V gate drive, PG-SOT223-4 package, -55°C to 150°C junction temperature.","salesMarkdown":"## Gate drive and switching — what 39 nC gate charge buys you The ISP650P06NMXTSA1: Total gate charge is 39 nC at 10 V. Input capacitance is 1600 pF at 30 V Vds. ## Temperature range — rated for harsh environments The maximum power dissipation is 1.8 W at 25°C ambient (Ta) and 4.2 W at the case (Tc) — the case rating assumes the SOT-223 tab is soldered to a substantial copper pour. Derate above 25°C per the datasheet curve; at 85°C ambient the allowable dissipation drops to roughly 1.2 W. ## Package and footprint — PG-SOT223-4 The device is supplied in the PG-SOT223-4 package (TO-261-4 equivalent), a surface-mount package with a large drain tab on the bottom.","metaTitle":"ISP650P06NMXTSA1 P-Channel MOSFET, 60V 3.7A, 65mOhm Rds(on)","metaDescription":"Infineon ISP650P06NMXTSA1 OptiMOS P-Channel MOSFET, 60V Vdss, 3.7A Id, 65mOhm Rds(on) at 10V. SOT-223 package, -55°C to 150°C.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1.037mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"65mOhm @ 3.7A, 10V","Power Dissipation (Max)":"1.8W (Ta), 4.2W (Tc)","Supplier Device Package":"PG-SOT223-4","Gate Charge (Qg) (Max) @ Vgs":"39 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1600 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3.7A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.49","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.49000","currency":"USD"},{"qty":10,"price":"$1.24100","currency":"USD"},{"qty":100,"price":"$0.98770","currency":"USD"},{"qty":500,"price":"$0.83574","currency":"USD"},{"qty":1000,"price":"$0.70912","currency":"USD"},{"qty":2000,"price":"$0.67367","currency":"USD"},{"qty":5000,"price":"$0.64834","currency":"USD"},{"qty":10000,"price":"$0.62688","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/139fc8e19303883dd81d2b564e6313f7.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the ISP650P06NMXTSA1?","answer":"The maximum on-resistance is 65 mOhm at a drain current of 3.7 A and a gate-source voltage of 10 V. This is the conduction loss spec — at 3.7 A the channel dissipates about 0.9 W."},{"question":"What package does the ISP650P06NMXTSA1 come in?","answer":"The drain tab is the bottom pad."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/ISP650P06NMXTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/ISP650P06NMXTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}