{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"ISP16DP10LMXTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"ISP16DP10LMXTSA1","canonicalUrl":"https://icboms.com/infineon/ISP16DP10LMXTSA1","factsUrl":"https://icboms.com/api/mcp/products/ISP16DP10LMXTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ ISP16DP10LMXTSA1, P-Channel MOSFET, 100 V Vdss, 2.1 A (Ta) / 3.9 A (Tc), 160 mOhm Rds(on) @ 10 V, PG-SOT223-4, -55 to 150 °C.","salesMarkdown":"The Infineon ISP16DP10LMXTSA1 is a P-channel enhancement-mode MOSFET from the OptiMOS™ family, rated for 100 V drain-source and 2.1 A continuous drain current at ambient temperature. It comes in a PG-SOT223-4 surface-mount package — a 4-pin SOT-223 with the tab as drain, standard footprint for reflow or hand-solder assembly. ## Active lifecycle — no LTB risk for new designs For a BOM freeze or a new design, this part is a safe call. The ROHS3 compliance covers current RoHS requirements without exemptions.","metaTitle":"Infineon ISP16DP10LMXTSA1 P-Channel MOSFET, 100 V, 2.1 A","metaDescription":"Infineon OptiMOS™ P-channel MOSFET, 100 V Vdss, 2.1 A continuous drain, 160 mOhm Rds(on) at 10 V. Active lifecycle, -55 to 150 °C.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 1.037mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"160mOhm @ 2.2A, 10V","Power Dissipation (Max)":"1.8W (Ta), 5W (Tc)","Supplier Device Package":"PG-SOT223-4","Gate Charge (Qg) (Max) @ Vgs":"42 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"2100 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"2.1A (Ta), 3.9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.49","priceTiers":[{"qty":1,"price":"$1.49000","currency":"USD"},{"qty":10,"price":"$1.32900","currency":"USD"},{"qty":25,"price":"$1.26120","currency":"USD"},{"qty":100,"price":"$1.03600","currency":"USD"},{"qty":250,"price":"$0.96848","currency":"USD"},{"qty":500,"price":"$0.85586","currency":"USD"},{"qty":1000,"price":"$0.68548","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/456269623eae12914045d6b636afbeaa.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/ISP16DP10LMXTSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold of ISP16DP10LMXTSA1?","answer":"The maximum gate threshold voltage is 2 V at 1.037 mA drain current. That means a 3.3 V or 5 V logic signal can turn the MOSFET on, though the full 160 mOhm Rds(on) is specified at 10 V gate drive."},{"question":"What is the maximum drain current for ISP16DP10LMXTSA1?","answer":"Continuous drain current is rated at 2.1 A at 25 °C ambient (Ta) and 3.9 A at 25 °C case temperature (Tc). The 2.1 A figure is the practical limit for a typical SOT-223 layout without a heatsink."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/ISP16DP10LMXTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/ISP16DP10LMXTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}