{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"ISL6208CBZ-T","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"ISL6208CBZ-T","canonicalUrl":"https://icboms.com/renesas/ISL6208CBZ-T","factsUrl":"https://icboms.com/api/mcp/products/ISL6208CBZ-T","rawCanonicalId":null},"summary":{"shortDescription":"Renesas Electronics ISL6208CBZ-T half-bridge N-channel MOSFET gate driver, 2A peak source/sink, 4.5V to 5.5V supply, 8ns rise/fall, 8-SOIC surface mount package.","salesMarkdown":"## Active production — sourcing for the BOM line The ISL6208CBZ-T: ROHS3 compliant — no restricted-substance exemptions that would trigger a future revision or require a waiver for European-market builds. ## Half-bridge driver — 2 A peak into synchronous N-channel FETs Driven configuration is half-bridge, channel type synchronous, gate type N-channel MOSFET — the standard topology for a synchronous buck converter's high-side and low-side FETs. Peak output current is 2 A source and 2 A sink, enough to charge and discharge the gate capacitance of a medium-power MOSFET in the 10–30 nC range without excessive switching loss. Non-inverting input means the driver output follows the logic input without polarity inversion — the PWM controller's signal goes straight to the driver without an external inverter. ## Supply rail and bootstrap — 5 V part with 33 V high-side headroom High-side bootstrap voltage maximum is 33 V, meaning the floating driver supply can ride up to 33 V above the switch node — adequate for a 24 V input rail with margin for transients. ## Switching speed and package — 8 ns edges in an 8-SOIC Typical rise and fall times are 8 ns each — fast enough for switching frequencies above 500 kHz without the dead-time penalty eating into duty cycle, but fast enough that the gate-drive loop inductance must be kept under 10 nH to avoid ringing. Package is 8-SOIC (0.154\" body width, 3.90 mm), supplier device package 8-SOIC — standard footprint with no exposed thermal pad, so junction-to-ambient thermal resistance depends on the PCB copper area under the part.","metaTitle":"Renesas ISL6208CBZ-T Half-Bridge Gate Driver, 2A, 8-SOIC","metaDescription":"Active-production Renesas ISL6208CBZ-T half-bridge N-channel MOSFET driver. 2A peak source/sink, 4.5-5.5V supply, 8ns rise/fall, 8-SOIC. ROHS3. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Synchronous","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"4.5V ~ 5.5V","Number of Drivers":"2","Driven Configuration":"Half-Bridge","Operating Temperature":"-10°C ~ 125°C (TJ)","Rise / Fall Time (Typ)":"8ns, 8ns","Supplier Device Package":"8-SOIC","Logic Voltage - VIL, VIH":"0.5V, 2V","High Side Voltage - Max (Bootstrap)":"33 V","Current - Peak Output (Source, Sink)":"2A, 2A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.13","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.13000","currency":"USD"},{"qty":10,"price":"$1.91000","currency":"USD"},{"qty":25,"price":"$1.80200","currency":"USD"},{"qty":100,"price":"$1.53530","currency":"USD"},{"qty":250,"price":"$1.44160","currency":"USD"},{"qty":500,"price":"$1.26140","currency":"USD"},{"qty":1000,"price":"$1.13560","currency":"USD"},{"qty":2500,"price":"$1.13560","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/dea924de1bfc7b4f51c385eb196c91ae.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the ISL6208CBZ-T's gate type and driver configuration?","answer":"It is a half-bridge driver for N-channel MOSFETs, synchronous channel type, with a non-inverting input. The driven configuration is half-bridge, meaning it drives one high-side and one low-side N-channel FET in a synchronous buck topology."},{"question":"What is the ISL6208CBZ-T's peak output current?","answer":"Peak output current is 2 A source and 2 A sink, sufficient for driving medium-power MOSFETs with gate charge in the 10–30 nC range."},{"question":"What package does the ISL6208CBZ-T come in?","answer":"It is supplied in an 8-SOIC package (0.154\" body width, 3.90 mm width) with a supplier device package of 8-SOIC. Available in tape and reel or cut tape formats."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/ISL6208CBZ-T","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/ISL6208CBZ-T when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}