{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"ISC030N10NM6ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"ISC030N10NM6ATMA1","canonicalUrl":"https://icboms.com/infineon/ISC030N10NM6ATMA1","factsUrl":"https://icboms.com/api/mcp/products/ISC030N10NM6ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ 6 N-Channel MOSFET, ISC030N10NM6ATMA1, 100 V drain-source, 3 mOhm Rds(on) max at 50 A, 179 A continuous drain, 8-PowerTDFN package, -55°C to 175°C junction temperature.","salesMarkdown":"## What this 100 V OptiMOS 6 FET delivers The Infineon ISC030N10NM6ATMA1 is a 100 V N-channel MOSFET from the OptiMOS 6 trench family, built for low conduction loss in a compact 8-PowerTDFN package. The headline rating is a maximum on-resistance of 3 mOhm at a 50 A drain current with a 10 V gate drive. Gate drive is specified for an 8 V to 10 V window to achieve the minimum Rds(on). Total gate charge is 69 nC at 10 V, which is moderate for a 100 V part at this current level — a standard gate driver with a few amps of peak current will switch it cleanly at tens of kilohertz. Input capacitance is 5200 pF at 50 V drain-source, so the driver sees a moderate capacitive load; keep the gate loop tight to avoid ringing. The junction temperature range spans -55°C to 175°C, which covers under-hood automotive and industrial motor-drive environments. The part is ROHS3 compliant and the lifecycle status is active — no last-time-buy risk for new designs.","metaTitle":"Infineon ISC030N10NM6ATMA1 OptiMOS 6 N-Channel MOSFET, 100V","metaDescription":"Infineon ISC030N10NM6ATMA1 OptiMOS 6 N-Channel MOSFET, 100V drain-source, 3mOhm Rds(on) at 50A, 179A continuous drain, -55°C to 175°C.","metaKeywords":null},"attributes":{"series":"OptiMOS™ 6","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"OptiMOS™ 6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.3V @ 109µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"3mOhm @ 50A, 10V","Power Dissipation (Max)":"3W (Ta), 208W (Tc)","Supplier Device Package":"PG-TDSON-8 FL","Gate Charge (Qg) (Max) @ Vgs":"69 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"5200 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"8V, 10V","Current - Continuous Drain (Id) @ 25°C":"21A (Ta), 179A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.29","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.29000","currency":"USD"},{"qty":10,"price":"$2.76400","currency":"USD"},{"qty":100,"price":"$2.23610","currency":"USD"},{"qty":500,"price":"$1.98768","currency":"USD"},{"qty":1000,"price":"$1.70195","currency":"USD"},{"qty":2000,"price":"$1.60257","currency":"USD"},{"qty":5000,"price":"$1.53750","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/547f60e56d327c65fbab7c2581a3c308.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can ISC030N10NM6ATMA1 be used as a drop-in replacement for existing 100V TDSON-8 MOSFETs?","answer":"Yes, the PG-TDSON-8 FL footprint is pin-compatible with other Infineon 100 V TDSON-8 MOSFETs. The 3 mOhm Rds(on) is lower than the older ISC030N10NM5, so conduction losses drop. Verify the gate threshold voltage (max 3.3 V at 109 µA) against your gate drive — 5 V logic works, 3.3 V GPIO may need a driver."},{"question":"How does ISC030N10NM6ATMA1 compare in Rds(on) to the older ISC030N10NM5?","answer":"The ISC030N10NM6ATMA1 has a maximum Rds(on) of 3 mOhm at 50 A and 10 V, compared to the ISC030N10NM5 which typically has a slightly higher Rds(on) around 3.2 mOhm. The OptiMOS 6 generation delivers a measurable reduction in conduction loss for the same package and voltage class."},{"question":"What is the maximum junction temperature and power dissipation for ISC030N10NM6ATMA1?","answer":"The maximum junction temperature is 175°C. Power dissipation is rated at 3 W at the board level (Ta) and 208 W at the case (Tc). The board-level limit governs in natural convection; the case rating applies with proper heatsinking."},{"question":"Where can I buy ISC030N10NM6ATMA1 with immediate stock?","answer":"This part is sourced to order through independent distribution. Submit an RFQ for current stock availability and pricing — stock positions change daily, and a quote confirms what is available at the time of request."},{"question":"What is the recommended gate drive voltage for optimal Rds(on) of ISC030N10NM6ATMA1?","answer":"The drive voltage range for achieving the minimum Rds(on) is 8 V to 10 V. The datasheet specifies Rds(on) at 10 V; driving below 8 V will increase on-resistance. A standard 10 V gate drive is recommended for full performance."},{"question":"Is ISC030N10NM6ATMA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/ISC030N10NM6ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/ISC030N10NM6ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}