{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRS2104STRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRS2104STRPBF","canonicalUrl":"https://icboms.com/infineon/IRS2104STRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRS2104STRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRS2104STRPBF, half-bridge gate driver, 600V bootstrap, 290mA source / 600mA sink peak output, 70ns rise / 35ns fall, 10V–20V supply, -40°C to 150°C junction, 8-SOIC surface mount.","salesMarkdown":"## Half-bridge driver for IGBT and N-channel MOSFET gates The Infineon IRS2104STRPBF is a high-voltage half-bridge gate driver in an 8-SOIC package, designed to drive two N-channel MOSFETs or IGBTs in a synchronous half-bridge configuration. It integrates a bootstrap diode for the high-side floating supply, rated to 600 V max, so no external high-voltage diode is needed for the bootstrap rail. The input is non-inverting — a single PWM signal on the IN pin produces complementary high- and low-side outputs with built-in deadtime to prevent shoot-through. Supply voltage spans 10 V to 20 V. Peak output current is 290 mA source, 600 mA sink. ## 600 V bootstrap — what it means for the bus The 600 V high-side voltage max (bootstrap) sets the DC bus voltage this driver can float on. ## Peak output current and switching speed With 290 mA source and 600 mA sink peak current, the IRS2104STRPBF is sized for medium-power IGBTs and MOSFETs. ## Logic thresholds and interface Logic input thresholds are 0.8 V (VIL) and 2.5 V (VIH). ## Lifecycle and sourcing reality The IRS2104STRPBF carries an Active product status and is ROHS3 compliant. Infineon lists no end-of-life notice for this order code as of the current record. No LTB risk is indicated on the current lifecycle status.","metaTitle":"IRS2104STRPBF Half-Bridge Gate Driver, 600V, 8-SOIC","metaDescription":"IRS2104STRPBF half-bridge gate driver for IGBT/N-Ch MOSFET. 600V bootstrap, 290/600mA peak, 70/35ns rise/fall. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["DC-DC Power Modules"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"IGBT, N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Synchronous","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"10V ~ 20V","Number of Drivers":"2","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 150°C (TJ)","Rise / Fall Time (Typ)":"70ns, 35ns","Supplier Device Package":"8-SOIC","Logic Voltage - VIL, VIH":"0.8V, 2.5V","High Side Voltage - Max (Bootstrap)":"600 V","Current - Peak Output (Source, Sink)":"290mA, 600mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.34","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.34000","currency":"USD"},{"qty":10,"price":"$1.19500","currency":"USD"},{"qty":25,"price":"$1.13440","currency":"USD"},{"qty":100,"price":"$0.93180","currency":"USD"},{"qty":250,"price":"$0.87100","currency":"USD"},{"qty":500,"price":"$0.76972","currency":"USD"},{"qty":1000,"price":"$0.60767","currency":"USD"},{"qty":2500,"price":"$0.56716","currency":"USD"},{"qty":5000,"price":"$0.53880","currency":"USD"},{"qty":12500,"price":"$0.51854","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/irs2104.pdf?fileId=5546d462533600a40153567633f727a1","sourceUrl":null},"ai":{"faq":[{"question":"Is IRS2104STRPBF obsolete or end-of-life?","answer":"No. The IRS2104STRPBF has an Active product status per Infineon's current lifecycle record. No end-of-life notice is on file. It remains available for new designs and production."},{"question":"Does IRS2104STRPBF require an external bootstrap diode?","answer":"No. The bootstrap diode is integrated inside the IRS2104STRPBF. Only an external bootstrap capacitor (typically 0.1 µF to 1 µF, sized for the gate charge) is needed between the VB and VS pins."},{"question":"Can IRS2104STRPBF drive two IGBTs simultaneously?","answer":"Yes. The IRS2104STRPBF is a half-bridge driver with two outputs — one high-side and one low-side — that drive two IGBTs or N-channel MOSFETs in a synchronous half-bridge configuration. It cannot drive two independent loads; the outputs are complementary with built-in deadtime."},{"question":"What is the difference between IRS2104STRPBF and IR2104STRPBF?","answer":"The IRS2104STRPBF and IR2104STRPBF are functionally identical half-bridge drivers with the same pinout, 600 V bootstrap, 290/600 mA peak output, and 70/35 ns rise/fall times. The prefix 'IRS' denotes Infineon's lead-free, ROHS3-compliant plating finish; the 'IR' prefix is the older tin-lead finish. Both are Active and interchangeable in most designs, but the IRS version is preferred for new ROHS-compliant builds."},{"question":"What are the specifications of IRS2104STRPBF?","answer":"Key specs: half-bridge driver for IGBT/N-Ch MOSFET, 600 V bootstrap voltage, 10 V–20 V supply, 290 mA source / 600 mA sink peak output, 70 ns rise / 35 ns fall typical, non-inverting input with 0.8 V / 2.5 V logic thresholds, -40°C to 150°C junction temperature, 8-SOIC package, ROHS3 compliant, Active lifecycle."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRS2104STRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRS2104STRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}