{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRS2005STRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRS2005STRPBF","canonicalUrl":"https://icboms.com/infineon/IRS2005STRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRS2005STRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRS2005STRPBF half-bridge gate driver, 200 V bootstrap, 290 mA source / 600 mA sink peak, 70 ns rise / 30 ns fall, 10-20 V supply, -40 to 150°C TJ, 8-SOIC package.","salesMarkdown":"## Half-bridge gate driver for 200 V bus rails The Infineon IRS2005STRPBF is a half-bridge gate driver for IGBTs and N-channel MOSFETs. Its bootstrap supply handles up to 200 V on the high side. The two independent channels deliver 290 mA source and 600 mA sink peak current, with typical rise and fall times of 70 ns and 30 ns respectively. Supply range is 10 V to 20 V. The 8-SOIC package keeps board area small. ## Temperature grade and deployment environment Rated for a junction temperature range of -40°C to 150°C, this driver is specified for industrial motor drives, automotive under-hood electronics, and outdoor telecom power supplies. The 150°C TJ ceiling means no external derating is required for most enclosed inverter designs. ## Switching performance and dead-time planning The 70 ns rise and 30 ns fall times are asymmetric — the turn-off edge is roughly twice as fast as turn-on. That matters for dead-time: you need to ensure the low-side gate has fully discharged before the high-side turns on, or vice versa, to avoid shoot-through. The faster fall gives you margin on the turn-off side, but the turn-on edge still sets the minimum dead-time window. In practice, with a 600 mA sink, the driver pulls the gate down hard; the 290 mA source is gentler on the bootstrap capacitor recharge.","metaTitle":"IRS2005STRPBF Half-Bridge Gate Driver, 200V Bootstrap","metaDescription":"IRS2005STRPBF from Infineon is an active half-bridge gate driver for IGBT and N-Channel MOSFETs. 200V bootstrap max, 290/600mA peak drive, -40 to 150°C TJ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"IGBT, N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Voltage - Supply":"10V ~ 20V","Number of Drivers":"2","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C ~ 150°C (TJ)","Rise / Fall Time (Typ)":"70ns, 30ns","Supplier Device Package":"8-SOIC","Logic Voltage - VIL, VIH":"0.8V, 2.5V","High Side Voltage - Max (Bootstrap)":"200 V","Current - Peak Output (Source, Sink)":"290mA, 600mA"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.92","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.92000","currency":"USD"},{"qty":10,"price":"$0.82600","currency":"USD"},{"qty":25,"price":"$0.78360","currency":"USD"},{"qty":100,"price":"$0.64370","currency":"USD"},{"qty":250,"price":"$0.60172","currency":"USD"},{"qty":500,"price":"$0.53176","currency":"USD"},{"qty":1000,"price":"$0.41981","currency":"USD"},{"qty":2500,"price":"$0.39182","currency":"USD"},{"qty":5000,"price":"$0.37223","currency":"USD"},{"qty":12500,"price":"$0.35824","currency":"USD"},{"qty":25000,"price":"$0.34704","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/97f8e072328d193785ca7a7817c9945b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What are the alternatives to IRS2005STRPBF?","answer":"The IR21064STRPBF is a functional peer in the same 8-SOIC footprint, offering a high-side or low-side driven configuration with 150 ns rise and 50 ns fall times. It shares the same 10 V supply and -40°C to 150°C temperature range, but the switching speed and drive current differ — verify timing margins before substituting."},{"question":"Can IRS2005STRPBF drive two N-channel MOSFETs in half-bridge?","answer":"Yes. The part is configured as a half-bridge driver with two independent channels, one for the high-side and one for the low-side N-channel MOSFET. The bootstrap circuit handles the high-side gate voltage above the DC rail."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRS2005STRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRS2005STRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}