{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLZ44ZS","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLZ44ZS","canonicalUrl":"https://icboms.com/infineon/IRLZ44ZS","factsUrl":"https://icboms.com/api/mcp/products/IRLZ44ZS","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRLZ44ZS, N-Channel MOSFET, 55 V Vdss, 51 A continuous drain, 13.5 mOhm Rds(on) at 10 V, 36 nC gate charge, D2PAK surface-mount package, -55 to 175 °C junction temperature.","salesMarkdown":"## 55 V, 51 A logic-level HEXFET in D2PAK The gate charge of 36 nC at 5 V means the gate driver does not need a high peak current for fast switching; a typical microcontroller GPIO through a series resistor can drive the gate for low-frequency switching. The device comes in a TO-263-3 / D2PAK surface-mount package (also known as D²Pak), which is a common power-package footprint with a large exposed tab for heat sinking.","metaTitle":"IRLZ44ZS HEXFET N-Channel MOSFET, 55V 51A D2PAK","metaDescription":"IRLZ44ZS N-channel HEXFET MOSFET, 55V Vdss, 51A Id, 13.5mOhm Rds(on) at 10V. D2PAK surface mount, -55 to 175°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"13.5mOhm @ 31A, 10V","Power Dissipation (Max)":"80W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 5 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"1620 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"51A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.3200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/8b115a363070061375a79c3374690212.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRLZ44ZS/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of IRLZ44ZS?","answer":"The maximum on-resistance is 13.5 mOhm at 31 A drain current with 10 V gate drive. The device also supports 4.5 V gate drive for logic-level operation, though the on-resistance will be higher than the 10 V value."},{"question":"What is the Vgs threshold of IRLZ44ZS?","answer":"The maximum gate threshold voltage is 3 V at 250 µA drain current. This means the device starts conducting with a gate-source voltage above 3 V, and full enhancement for minimum on-resistance requires 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLZ44ZS","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLZ44ZS when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}