{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLZ44ZLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLZ44ZLPBF","canonicalUrl":"https://icboms.com/infineon/IRLZ44ZLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRLZ44ZLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRLZ44ZLPBF, N-Channel MOSFET, 55 V drain-source, 51 A continuous drain, 13.5 mOhm Rds(on) at 10 V, TO-262-3 through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## What this HEXFET N-channel MOSFET offers Total gate charge is 36 nC at 5 V, and input capacitance measures 1620 pF at 25 V drain-source. The IRLZ44ZLPBF is listed as obsolete. At 31 A drain current, that resistance drops about 420 mV and dissipates roughly 13 W — well within the 80 W package limit at the case, but the junction-to-case thermal path needs a good heatsink or thermal pad to keep the die below 175°C. The 51 A continuous rating is at 25°C case temperature; derate for higher ambient or limited heatsinking. The logic-level gate threshold (3 V max at 250 µA) means a 5 V microcontroller output can drive it directly, though the 4.5 V minimum drive voltage for rated Rds(on) suggests using a 10 V gate supply for full saturation. ## Through-hole TO-262 package — hand-solderable and board-mount considerations The through-hole mounting means it can be hand-soldered or wave-soldered, which is handy for prototyping or low-volume production. Plan for adequate copper area or an external heatsink to handle the 80 W power dissipation at the case.","metaTitle":"IRLZ44ZLPBF N-Channel MOSFET, 55V 51A, TO-262","metaDescription":"IRLZ44ZLPBF HEXFET N-Channel MOSFET, 55V drain-source, 51A continuous, 13.5mOhm Rds(on) at 10V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3V @ 250µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"13.5mOhm @ 31A, 10V","Power Dissipation (Max)":"80W (Tc)","Supplier Device Package":"TO-262","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 5 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"1620 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"51A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/8b115a363070061375a79c3374690212.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IRLZ44ZLPBF obsolete?","answer":"Yes, the IRLZ44ZLPBF is listed as obsolete. Infineon has discontinued production, and the part is no longer in active manufacturing."},{"question":"What is the replacement for IRLZ44ZLPBF?","answer":"No official replacement order code is provided in the available records. A functionally similar logic-level N-channel MOSFET in a TO-262 package from the same HEXFET family would be the starting point for a substitute evaluation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLZ44ZLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLZ44ZLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}