{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLZ44NSPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLZ44NSPBF","canonicalUrl":"https://icboms.com/infineon/IRLZ44NSPBF","factsUrl":"https://icboms.com/api/mcp/products/IRLZ44NSPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRLZ44NSPBF, HEXFET® Series, N-Channel MOSFET, 55 V Vdss, 47 A Id, 22 mOhm Rds(on) at 10 V, D2PAK (TO-263), -55 to 175 °C.","salesMarkdown":"## IRLZ44NSPBF — logic-level N-channel MOSFET in D2PAK The D2PAK (TO-263) surface-mount package suits automated assembly and carries the thermal tab for heatsinking through the PCB. ## Where a 55 V, 47 A logic-level FET fits The 55 V Vdss gives comfortable margin on 12 V, 24 V, and 48 V nominal rails — common in industrial motor drives, DC-DC converters, battery management systems, and automotive auxiliary loads. The 47 A continuous rating at case temperature 25 °C supports high-current switching, but the designer must derate per the thermal curve: at 100 °C case temperature the current capability drops significantly. The 48 nC typical gate charge at 5 V and 1700 pF input capacitance at 25 V drain-source are moderate figures — a 5 V gate driver with a few ohms of series resistance can switch this FET in the tens of kilohertz range without excessive cross-conduction loss. The ±16 V maximum gate-source voltage gives margin for gate-drive overshoot, but the logic-level threshold (2 V max at 250 µA,) means the gate must be held below 2 V to ensure a clean off-state, especially in noisy environments. The 22 mOhm Rds(on) at 10 V gate drive is the headline figure; at 4.5 V drive the resistance roughly doubles, so designs running from a 3.3 V gate signal should verify the actual on-resistance against the application current. The D2PAK footprint is widely second-sourced across the TO-263 ecosystem, so a cross-reference for dual-sourcing is straightforward if volume warrants qualification of an alternate.","metaTitle":"IRLZ44NSPBF N-Channel MOSFET, 55V 47A, D2PAK","metaDescription":"IRLZ44NSPBF HEXFET N-Channel MOSFET: 55V Vdss, 47A Id, 22mOhm Rds(on) at 10V. Active production, -55 to 175°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"22mOhm @ 25A, 10V","Power Dissipation (Max)":"3.8W (Ta), 110W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"48 nC @ 5 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"1700 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4V, 10V","Current - Continuous Drain (Id) @ 25°C":"47A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.3900","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9f5ac89aa50c6591bd055ed3089bffdf.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLZ44NSPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLZ44NSPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}