{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLZ34NSPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLZ34NSPBF","canonicalUrl":"https://icboms.com/infineon/IRLZ34NSPBF","factsUrl":"https://icboms.com/api/mcp/products/IRLZ34NSPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, IRLZ34NSPBF, N-Channel MOSFET, 55 V drain-source, 30 A continuous drain, 35 mΩ Rds(on) max at 10 V, D2PAK (TO-263) surface-mount package, -55°C to 175°C junction temperature.","salesMarkdown":"## 55 V, 30 A, 35 mΩ — the load-switching envelope The logic-level gate threshold — 2 V maximum at 250 µA — means a 5 V or 3.3 V logic output can fully enhance the channel, though the Rds(on) spec is characterised at both 4 V and 10 V gate drive, so confirm the on-resistance at your actual gate voltage. Housed in a D2PAK (TO-263-3) surface-mount package, the part dissipates 3.8 W in still air at 25 °C ambient and 68 W when the tab is held at 25 °C. The 68 W figure assumes a thermal pad or heatsink on the exposed tab — without it, the continuous current rating drops sharply. ## Obsolete — sourcing path for production Infineon lists the IRLZ34NSPBF as obsolete. For BOM lines that still call this exact marking, the channel is independent distribution — last-time-buy inventory and qualified surplus. If your design is still in prototyping, consider evaluating a current-production logic-level N-channel MOSFET in D2PAK with similar Vds and Id ratings to avoid a future last-time-buy scramble.","metaTitle":"IRLZ34NSPBF Infineon HEXFET N-Channel MOSFET, 55 V, 30 A","metaDescription":"IRLZ34NSPBF Infineon HEXFET N-Channel MOSFET, 55 Vdss, 30 A Id, 35 mΩ Rds(on) at 10 V. D2PAK surface mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"35mOhm @ 16A, 10V","Power Dissipation (Max)":"3.8W (Ta), 68W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"25 nC @ 5 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"880 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4V, 10V","Current - Continuous Drain (Id) @ 25°C":"30A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.4800","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/85af09a949bedc0c61e4035c708ed120.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLZ34NSPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLZ34NSPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}