{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLR3410TRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLR3410TRLPBF","canonicalUrl":"https://icboms.com/infineon/IRLR3410TRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRLR3410TRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® N-Channel MOSFET, IRLR3410TRLPBF, 100 Vdss, 17 A Id, 105 mOhm Rds(on) at 10 V, D-Pak (TO-252) surface mount, -55°C to 175°C.","salesMarkdown":"## 100 V, 17 A N-channel — the switching envelope Maximum on-resistance is 105 mOhm at 10 A gate drive of 10 V — the Rds(on) floor for conduction-loss calculations in a switching regulator or load switch. Gate charge totals 34 nC at 5 V, and input capacitance is 800 pF at 25 V drain bias. That keeps the drive current modest — a 34 nC gate switched at 100 kHz draws about 3.4 mA from the gate driver, well within a standard totem-pole driver's capability. ## Package and mounting Housed in a TO-252-3 D-Pak (2 leads plus tab), this is a surface-mount power package with an exposed drain tab. The tab is the primary thermal path — the board copper area under it sets the junction-to-ambient thermal resistance. On a standard 1 oz copper pad with adequate via stitching, the 79 W maximum dissipation at case temperature is achievable; without the copper plane, derate aggressively. The D-Pak is hand-solderable with a standard iron if the tab gets a preheat bump — no hot-air station required for a field swap. Orientation is obvious: the tab is drain, gate is pin 1 (left when the tab faces away), source is pin 2. Marking on the package body is legible under magnification. ## Lifecycle and compliance — active, ROHS3, no LTB No official successor or second-source cross-reference is listed in the manufacturer documentation. The 175°C ceiling gives headroom for transient overloads without immediate derating to a lower-temperature device.","metaTitle":"IRLR3410TRLPBF HEXFET N-Ch MOSFET, 100V 17A D-Pak","metaDescription":"IRLR3410TRLPBF N-channel HEXFET MOSFET, 100V drain-source, 17A continuous, 105mOhm Rds(on) at 10V. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"105mOhm @ 10A, 10V","Power Dissipation (Max)":"79W (Tc)","Supplier Device Package":"D-Pak","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 5 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"800 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4V, 10V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.06","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.26000","currency":"USD"},{"qty":10,"price":"$1.12900","currency":"USD"},{"qty":100,"price":"$0.87990","currency":"USD"},{"qty":500,"price":"$0.72686","currency":"USD"},{"qty":1000,"price":"$0.57384","currency":"USD"},{"qty":3000,"price":"$0.51327","currency":"USD"},{"qty":6000,"price":"$0.48761","currency":"USD"},{"qty":15000,"price":"$0.47820","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/fa446a05f7ddcf0000de8420c884adde.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for IRLR3410TRLPBF?","answer":"No official replacement or second-source part number is published by the manufacturer for the IRLR3410TRLPBF. The peer IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET but operates at 500 V / 4.3 A with a 950 mOhm Rds(on) — it is not a functional substitute for the 100 V / 17 A / 105 mOhm IRLR3410TRLPBF. For a drop-in alternative, cross-reference the package (D-Pak), Vdss (100 V), and Rds(on) against other HEXFET or equivalent N-channel parts in the same TO-252 footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLR3410TRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLR3410TRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}