{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLR2705TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLR2705TRPBF","canonicalUrl":"https://icboms.com/infineon/IRLR2705TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRLR2705TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, IRLR2705TRPBF, N-Channel MOSFET, 55 V Vdss, 28 A Id, 40 mOhm Rds(on) @ 17 A 10 V, D-Pak (TO-252-3) surface mount, -55°C to 175°C.","salesMarkdown":"At 17 A, the 40 mOhm Rds(on) produces about 11.6 W of conduction loss at 25°C junction. The D-Pak (TO-252-3) with exposed tab can dissipate 68 W at case temperature, so the margin is comfortable for continuous duty if the PCB copper area is adequate. The gate-drive voltage for rated Rds(on) is 10 V, but the part is characterised down to 4 V drive — useful if the gate driver rail is 5 V. ## Gate charge and switching speed Total gate charge is 25 nC at 5 V gate-source. For a 100 kHz switching frequency, the average gate-drive current is 2.5 mA — easily met by a standard gate driver. Input capacitance is 880 pF at 25 V drain-source, which keeps the Miller plateau narrow and the switching losses moderate. ## Temperature range and environment The D-Pak surface-mount package suits automated assembly and reflow soldering. ## Lifecycle and compliance It is ROHS3 compliant, with no exemptions that would restrict EU or global BOM acceptance.","metaTitle":"IRLR2705TRPBF N-Channel MOSFET, 55V 28A DPAK, 40 mOhm","metaDescription":"IRLR2705TRPBF HEXFET N-Channel MOSFET, 55V Vdss, 28A Id, 40 mOhm Rds(on) at 10V. DPAK surface mount, -55 to 175°C. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"40mOhm @ 17A, 10V","Power Dissipation (Max)":"68W (Tc)","Supplier Device Package":"D-Pak","Gate Charge (Qg) (Max) @ Vgs":"25 nC @ 5 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"880 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4V, 10V","Current - Continuous Drain (Id) @ 25°C":"28A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.78","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.93000","currency":"USD"},{"qty":10,"price":"$0.81700","currency":"USD"},{"qty":100,"price":"$0.62600","currency":"USD"},{"qty":500,"price":"$0.49488","currency":"USD"},{"qty":1000,"price":"$0.39590","currency":"USD"},{"qty":2000,"price":"$0.36085","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/685d3ea4edfd7d250c797753107a5e76.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the equivalent MOSFET to IRLR2705TRPBF?","answer":"The IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET but it is a 500 V, 4.3 A device with 950 mOhm Rds(on) — a different voltage and current class entirely. It is not a functional equivalent for a 55 V, 28 A application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLR2705TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLR2705TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}