{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLML9303TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLML9303TRPBF","canonicalUrl":"https://icboms.com/infineon/IRLML9303TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRLML9303TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® P-Channel MOSFET, IRLML9303TRPBF, 30 V Vdss, 2.3 A Id, 165 mOhm Rds(on) at 10 V, SOT-23 package, -55°C to 150°C operating temperature.","salesMarkdown":"## P-channel load switch in a SOT-23 footprint Packaged in a SOT-23 (Micro3) surface-mount case, it is a common choice for high-side load switching in battery-powered and low-voltage systems where a P-channel simplifies the gate drive — no charge pump needed. The 165 mOhm maximum on-resistance at 10 Vgs keeps conduction losses manageable for loads up to a couple of amps, and the ±20 V gate-source rating gives headroom for 12 V or 15 V gate drives. ## Gate drive and switching parasitics Gate charge is 2 nC typical at 4.5 Vgs, meaning a modest GPIO pin or a small driver can switch it quickly without a pre-driver. Input capacitance Ciss is 160 pF at 25 Vds, which keeps the switching losses low in moderate-frequency converters or load switches. The threshold voltage is specified at 2.4 V maximum at 10 µA drain current, so a 3.3 V logic signal can turn it on fully — though the 165 mOhm Rds(on) figure is guaranteed at 4.5 Vgs and 10 Vgs, not at the threshold edge. ## Thermal budget in a small package The SOT-23 package limits maximum power dissipation to 1.25 W at 25°C ambient. For a 2.3 A load with 165 mOhm Rds(on), the conduction loss is about 0.87 W — that leaves only about 0.38 W of margin before hitting the thermal ceiling. In practice, derating above 25°C is necessary; a 1 A load is a safer fit for continuous operation without exceeding the junction temperature rating of 150°C. ## Lifecycle and supply posture It is ROHS3 compliant. No official replacement or second-source part is listed in the manufacturer's cross-reference.","metaTitle":"IRLML9303TRPBF P-Channel MOSFET 30V 2.3A SOT-23","metaDescription":"IRLML9303TRPBF P-channel MOSFET from Infineon HEXFET series. 30V Vdss, 2.3A Id, 165mOhm Rds(on) at 10V. SOT-23 package. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.4V @ 10µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"165mOhm @ 2.3A, 10V","Power Dissipation (Max)":"1.25W (Ta)","Supplier Device Package":"Micro3™/SOT-23","Gate Charge (Qg) (Max) @ Vgs":"2 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"160 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"2.3A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.47","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.47000","currency":"USD"},{"qty":10,"price":"$0.33500","currency":"USD"},{"qty":100,"price":"$0.16900","currency":"USD"},{"qty":500,"price":"$0.14978","currency":"USD"},{"qty":1000,"price":"$0.11655","currency":"USD"},{"qty":3000,"price":"$0.10432","currency":"USD"},{"qty":6000,"price":"$0.10199","currency":"USD"},{"qty":9000,"price":"$0.09033","currency":"USD"},{"qty":30000,"price":"$0.08916","currency":"USD"},{"qty":75000,"price":"$0.07576","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b9018e9a3134435c66b114e2fb8a4a5a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can IRLML9303TRPBF be driven directly from a 3.3 V logic signal?","answer":"Yes. The maximum gate threshold voltage is 2.4 V at 10 µA drain current, so a 3.3 V logic signal is sufficient to turn the MOSFET on. However, the guaranteed on-resistance of 165 mOhm is specified at both 4.5 Vgs and 10 Vgs — at 3.3 Vgs the Rds(on) will be higher; check the typical transfer curve in the datasheet to estimate the actual value at your gate drive voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLML9303TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLML9303TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}