{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLML2803TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLML2803TRPBF","canonicalUrl":"https://icboms.com/infineon/IRLML2803TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRLML2803TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRLML2803TRPBF, HEXFET® series N-channel MOSFET, 30 V drain-source, 1.2 A continuous drain, 250 mOhm Rds(on) max at 10 V, logic-level gate, SOT-23 surface-mount package.","salesMarkdown":"## 30 V, 1.2 A N-channel in SOT-23 — logic-level gate, low gate charge The drive voltage range for achieving rated Rds(on) is 4.5 V to 10 V; at 3.3 V gate drive the on-resistance will be higher than the 250 mOhm max specified at 10 V. ## SOT-23 footprint, 540 mW dissipation, -55 to 150 °C junction Supplied in the Micro3™/SOT-23 package (TO-236-3 / SC-59 / SOT-23-3), surface-mount only — the 540 mW power dissipation at 25 °C ambient is the thermal budget for the small footprint. The part is ROHS3 compliant.","metaTitle":"IRLML2803TRPBF MOSFET, N-Channel 30V 1.2A SOT-23","metaDescription":"IRLML2803TRPBF N-channel MOSFET, 30V Vdss, 1.2A Id, 250mOhm Rds(on) at 10V. Logic-level gate threshold. SOT-23 package. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"250mOhm @ 910mA, 10V","Power Dissipation (Max)":"540mW (Ta)","Supplier Device Package":"Micro3™/SOT-23","Gate Charge (Qg) (Max) @ Vgs":"5 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"85 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"1.2A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.49","priceTiers":[{"qty":1,"price":"$0.49000","currency":"USD"},{"qty":10,"price":"$0.40100","currency":"USD"},{"qty":100,"price":"$0.27300","currency":"USD"},{"qty":500,"price":"$0.20476","currency":"USD"},{"qty":1000,"price":"$0.15358","currency":"USD"},{"qty":3000,"price":"$0.14078","currency":"USD"},{"qty":6000,"price":"$0.13225","currency":"USD"},{"qty":15000,"price":"$0.12443","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/26c16dd53e286ae45eb0b4598581b2b0.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRLML2803TRPBF/alternatives.json"},"ai":{"faq":[{"question":"Is IRLML2803TRPBF a logic-level MOSFET?","answer":"Yes."},{"question":"What is the Rds(on) of IRLML2803TRPBF at 3.3 V gate drive?","answer":"The datasheet specifies Rds(on) at 4.5 V and 10 V drive voltages. At 3.3 V gate drive the on-resistance will be higher than the 250 mOhm max listed at 10 V — the exact value depends on the Vgs vs Rds(on) curve in the datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLML2803TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLML2803TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}