{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLHS6276TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLHS6276TRPBF","canonicalUrl":"https://icboms.com/infineon/IRLHS6276TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRLHS6276TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, IRLHS6276TRPBF, dual N-channel MOSFET, 20V Vdss, 4.5A Id, 45mOhm Rds(on) at 4.5V, logic-level gate, 6-PQFN (2x2) package, -55°C to 150°C.","salesMarkdown":"## Dual N-channel logic-level MOSFET in a 2x2 PQFN The Infineon IRLHS6276TRPBF is a dual N-channel MOSFET from the HEXFET® series, built for low-voltage load switching and DC-DC conversion where board space is tight. The logic-level gate threshold (Vgs(th) max 1.1 V at 10 µA) lets the MOSFET turn on fully from a 2.5 V or 3.3 V logic rail — no separate gate driver needed for most microcontroller or FPGA outputs. ## Conduction loss and switching speed for the BOM The 45 mOhm Rds(on) at 4.5 V gate drive sets the conduction loss floor — at 3.4 A the drop is about 150 mV per channel. Total gate charge is 3.1 nC at 4.5 V, which keeps switching losses low even at several hundred kHz; a 3.3 V GPIO sourcing a few mA can drive the gate directly. Input capacitance Ciss is 310 pF at 10 V drain bias — the gate drive sees a light capacitive load, so rise/fall times stay under 10 ns with a modest source impedance. The 1.5 W package power limit (6-PQFN, 2x2 mm) means the total dissipation across both channels must stay within that ceiling; a 4-layer board with thermal vias under the exposed pad helps pull heat into the inner planes. ## Temperature range and deployment environments The wide range also covers cold-start conditions in battery-powered equipment. ## Lifecycle and sourcing It is ROHS3 compliant.","metaTitle":"IRLHS6276TRPBF Infineon Dual N-Ch MOSFET, 20V 4.5A","metaDescription":"Infineon IRLHS6276TRPBF dual N-channel HEXFET MOSFET, 20V Vdss, 4.5A Id, 45mOhm Rds(on) at 4.5V. Logic-level gate. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"2 N-Channel (Dual)","FET Feature":"Logic Level Gate","Power - Max":"1.5W","Mounting Type":"Surface Mount","Package / Case":"6-VQFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.1V @ 10µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"45mOhm @ 3.4A, 4.5V","Supplier Device Package":"6-PQFN (2x2)","Gate Charge (Qg) (Max) @ Vgs":"3.1nC @ 4.5V","Drain to Source Voltage (Vdss)":"20V","Input Capacitance (Ciss) (Max) @ Vds":"310pF @ 10V","Current - Continuous Drain (Id) @ 25°C":"4.5A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.68","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.81000","currency":"USD"},{"qty":10,"price":"$0.71400","currency":"USD"},{"qty":100,"price":"$0.54770","currency":"USD"},{"qty":500,"price":"$0.43296","currency":"USD"},{"qty":1000,"price":"$0.34637","currency":"USD"},{"qty":2000,"price":"$0.31570","currency":"USD"},{"qty":4000,"price":"$0.31570","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/86def6b5d217686f1d1680c5a896715e.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLHS6276TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLHS6276TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}