{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRLB3036PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRLB3036PBF","canonicalUrl":"https://icboms.com/infineon/IRLB3036PBF","factsUrl":"https://icboms.com/api/mcp/products/IRLB3036PBF","rawCanonicalId":null},"summary":{"shortDescription":"IRLB3036PBF, HEXFET series, N-Channel MOSFET, 60V Vdss, 195A Id, 2.4mOhm Rds(on) at 10V, logic-level gate, TO-220AB package, -55°C to 175°C.","salesMarkdown":"## Logic-level gate: one less driver on the BOM The gate threshold voltage maxes out at 2.5 V at 250 µA, and the drive voltage range for achieving the rated Rds(on) spans 4.5 V to 10 V. That means a 5 V microcontroller output or a standard 5 V PWM signal can fully enhance the FET without a dedicated gate-driver IC — a real BOM simplification for low-voltage battery-powered systems or 5 V logic-controlled loads. ## Gate charge and input capacitance — sizing the drive Total gate charge is 140 nC at 4.5 V, and input capacitance (Ciss) measures 11210 pF at 50 V Vds. For a 20 kHz switching application, the average gate-drive current needed is about 2.8 mA — well within the capability of a logic output. But the 140 nC charge also means the gate-drive source impedance must be low enough to avoid excessive switching losses during the Miller plateau; a 10 Ω to 22 Ω series gate resistor is a typical starting point for balancing rise time against ringing. ## Thermal headroom in the TO-220AB The 175°C Tj(max) is the upper limit for military and downhole applications — the same rating as many high-reliability parts. In practice, the 380 W ceiling is only reachable with an infinite heatsink; real-world designs derate based on the thermal resistance junction-to-case and the available heatsink area. The through-hole TO-220AB package allows a direct bolt-down to a chassis or heatsink, which is still the most thermally efficient mounting method for a discrete power FET.","metaTitle":"IRLB3036PBF HEXFET N-Channel MOSFET, 60V 195A TO-220AB","metaDescription":"IRLB3036PBF N-channel HEXFET MOSFET: 60V Vdss, 195A Id, 2.4mOhm Rds(on) at 10V. Logic-level gate. Active production.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"2.4mOhm @ 165A, 10V","Power Dissipation (Max)":"380W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"140 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"11210 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"195A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.14","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.72000","currency":"USD"},{"qty":10,"price":"$4.23800","currency":"USD"},{"qty":100,"price":"$3.47230","currency":"USD"},{"qty":500,"price":"$2.95590","currency":"USD"},{"qty":1000,"price":"$2.49292","currency":"USD"},{"qty":2000,"price":"$2.36828","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d8f5ebfcc329516860ff4d58047fc397.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IRLB3036PBF a logic-level MOSFET?","answer":"Yes. The maximum gate threshold voltage is 2.5 V at 250 µA, and the drive voltage range for achieving the rated Rds(on) is 4.5 V to 10 V, so a standard 5 V logic signal can fully enhance the FET."},{"question":"Is IRLB3036PBF a good replacement for IRF3205?","answer":"The IRLB3036PBF has a lower Rds(on) (2.4 mOhm vs the IRF3205's typical 8 mOhm) and a logic-level gate threshold, making it a drop-in upgrade in many TO-220 applications. However, the IRF3205 is rated for 55 V Vdss versus 60 V here, and the pinout is identical in the TO-220AB package. Confirm the gate-drive voltage and switching frequency in your circuit before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRLB3036PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRLB3036PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}