{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRL6372TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRL6372TRPBF","canonicalUrl":"https://icboms.com/infineon/IRL6372TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRL6372TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRL6372TRPBF, dual N-channel MOSFET, 30V Vdss, 8.1A Id, 17.9mOhm Rds(on) at 4.5V, logic-level gate, 8-SOIC package, -55°C to 150°C.","salesMarkdown":"The maximum on-resistance of 17.9 mOhm at 8.1 A drain current with a 4.5 V gate drive is the parametric that sets the conduction loss budget. At 8.1 A, the I²R loss is under 1.2 W per channel, but the total package dissipation is limited to 2 W — so both channels cannot run at full current simultaneously without exceeding the thermal limit. The 8-SOIC footprint with standard 0.050-inch pitch demands a 2-ounce copper pour on the drain pads to keep the junction temperature inside the -55°C to 150°C operating range. Gate charge is 11 nC max at 4.5 V, and input capacitance is 1020 pF at 25 V drain-source. These numbers are moderate — a 100 kHz switching frequency draws about 1.1 mA from the gate driver, well within the capability of an MCU GPIO pin if a series resistor limits the peak current. The 8-SO package's thermal resistance to ambient is around 120 °C/W on a standard FR4 board; the 2 W power limit assumes the copper area recommended in the datasheet layout note. ## Active production, ROHS3 compliant No official second-source or cross-reference is listed in the manufacturer documentation, so dual-sourcing requires qualifying a functionally similar logic-level dual N-channel MOSFET in the same 8-SO footprint.","metaTitle":"IRL6372TRPBF HEXFET Dual N-Ch MOSFET, 30V 8.1A Logic Level","metaDescription":"IRL6372TRPBF dual N-channel HEXFET MOSFET, 30V Vdss, 8.1A Id, 17.9mOhm Rds(on) at 4.5V. Logic-level gate, active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"MOSFET (Metal Oxide)","FET Feature":"Logic Level Gate","Power - Max":"2W","Configuration":"2 N-Channel (Dual)","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.1V @ 10µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"17.9mOhm @ 8.1A, 4.5V","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"11nC @ 4.5V","Drain to Source Voltage (Vdss)":"30V","Input Capacitance (Ciss) (Max) @ Vds":"1020pF @ 25V","Current - Continuous Drain (Id) @ 25°C":"8.1A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.9","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.90000","currency":"USD"},{"qty":10,"price":"$0.73800","currency":"USD"},{"qty":100,"price":"$0.57370","currency":"USD"},{"qty":500,"price":"$0.48630","currency":"USD"},{"qty":1000,"price":"$0.39615","currency":"USD"},{"qty":2000,"price":"$0.37293","currency":"USD"},{"qty":4000,"price":"$0.37293","currency":"USD"},{"qty":8000,"price":"$0.35517","currency":"USD"},{"qty":12000,"price":"$0.33877","currency":"USD"},{"qty":28000,"price":"$0.33813","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3f766ca01396885f8ff71251cdd22336.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can I use IRL6372TRPBF with 3.3V logic?","answer":"Yes. The maximum gate-source threshold voltage is 1.1 V at 10 µA, and the on-resistance is specified at a 4.5 V gate drive. A 3.3 V logic output will fully enhance the channel, though the actual Rds(on) at 3.3 V will be slightly higher than the 17.9 mOhm figure listed at 4.5 V — expect roughly 20–22 mOhm in practice. The logic-level gate feature is the reason this part was designed."},{"question":"What is the equivalent part for IRL6372TRPBF?","answer":"No official cross-reference or second-source part is listed in the manufacturer documentation. A functionally equivalent dual N-channel logic-level MOSFET in an 8-SO package with similar Rds(on) and current ratings would need to be qualified independently for the BOM position."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRL6372TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRL6372TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}