{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRL6283MTRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRL6283MTRPBF","canonicalUrl":"https://icboms.com/infineon/IRL6283MTRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRL6283MTRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET®, StrongIRFET™ N-Channel Power MOSFET, 20 V, 38 A switching current, 0.75 mOhm Rds(on) @ 10 V, Surface Mount, Bulk package, -40°C to 150°C junction temperature.","salesMarkdown":"## What this MOSFET delivers on the board The Infineon IRL6283MTRPBF is an N-Channel power MOSFET from the HEXFET and StrongIRFET series, designed for low-voltage, high-current switching applications. It handles a continuous switching current of 38 A and blocks up to 20 V drain-to-source. The 0.75 mOhm maximum on-resistance at a 10 V gate drive keeps conduction losses low in DC-DC converters, motor drives, and load switches. The junction temperature range of -40°C to 150°C covers industrial and automotive environments. ## Rds(on) at 10 V — the number that sets the loss budget At a 10 V gate-source drive and 50 A drain current, the IRL6283MTRPBF guarantees a maximum on-resistance of 0.75 mOhm. That sub-milliohm figure is what a designer uses to calculate I²R losses in a high-current rail. For a 38 A load, conduction loss stays under 1.1 W at the rated current, leaving thermal headroom in a 2.1 W package. The gate threshold voltage of 1.1 V at 100 µA means the device turns on cleanly with logic-level gate drives, though the 0.75 mOhm spec is only valid at 10 V. ## Gate charge and switching speed The total gate charge at 4.5 V is 158 nC. That is a moderate charge for a 38 A MOSFET — it tells the designer the gate driver must source enough peak current to charge that capacitance within the desired switching interval. At higher switching frequencies, the gate-drive power loss (Qg × Vgs × fsw) becomes significant. The ±12 V maximum gate-source voltage gives margin for gate-drive overshoot in hard-switched topologies. ## Lifecycle and sourcing posture That means it can be specified into new designs without obsolescence risk.","metaTitle":"IRL6283MTRPBF Infineon N-Channel MOSFET, 0.75 mOhm @ 10V","metaDescription":"IRL6283MTRPBF N-Channel MOSFET from Infineon, 20V Vds, 38A switching current, 0.75 mOhm Rds(on) at 10V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±12 V","series":"HEXFET®, StrongIRFET™","power_w":"2.1","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0083","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"20.0","Vgs(Th) (Max) @ Id":"1.1 V @ 100µA","switching_current_a":"38.0","Rds On (Max) @ Id, Vgs":"0.75mOhm @ 50 A, 10 V","Operating Temperature High":"-40°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"158 nC @ 4.5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.92","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/620db0e8752657c999ad307118560ba0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRL6283MTRPBF at 10V?","answer":"At a 10 V gate-source voltage and 50 A drain current, the maximum on-resistance is 0.75 mOhm."},{"question":"What series is IRL6283MTRPBF from?","answer":"The IRL6283MTRPBF belongs to the HEXFET and StrongIRFET series from Infineon."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRL6283MTRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRL6283MTRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}