{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRL60HS118","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRL60HS118","canonicalUrl":"https://icboms.com/infineon/IRL60HS118","factsUrl":"https://icboms.com/api/mcp/products/IRL60HS118","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRL60HS118 N-Channel MOSFET, 60 V Vdss, 18.5 A Id, 17 mOhm Rds(on) at 11 A, 10 Vgs, 8 nC Qg at 4.5 V, -55°C to 175°C Tj, 6-PQFN (2x2) DFN2020 package, Surface Mount, ROHS3 Compliant.","salesMarkdown":"## 60 V, 18.5 A N-channel — the power envelope for this DFN2020 FET The 17 mOhm maximum on-resistance at 11 A with 10 V gate drive sets the conduction loss floor for the BOM thermal budget — at 11 A the I²R loss is about 2 W, which the 11.5 W package dissipation rating can handle with adequate copper on the drain pad. The 8 nC total gate charge at 4.5 V means a 3.3 V MCU GPIO can switch this FET at moderate frequencies without an external gate driver — the GPIO's 10-20 mA source capability charges the gate in under 1 µs. ## 175°C junction rating — headroom for high-ambient power designs The -55°C to 175°C operating junction temperature range exceeds the typical 150°C limit of many small-package FETs. In a sealed 85°C ambient with 2 W dissipation, the junction stays below 125°C — well within the 175°C ceiling. This margin matters for under-hood automotive, industrial motor drives, and hot-swap power supplies where the ambient temperature can spike. ## DFN2020 package — board area savings with thermal design constraints The 6-PQFN (2x2) DFN2020 package measures 2 mm × 2 mm, roughly half the footprint of an SO-8. Without that copper plane, the 11.5 W dissipation rating drops significantly; the effective RthJA depends on PCB copper area. ROHS3 compliant per the listing.","metaTitle":"Infineon IRL60HS118 N-Channel MOSFET, 60 V 18.5 A","metaDescription":"Infineon IRL60HS118 N-channel MOSFET, 60 V drain-source, 18.5 A continuous drain, 17 mOhm Rds(on) at 10 V gate drive. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"6-PowerVDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.3V @ 10µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"17mOhm @ 11A, 10V","Power Dissipation (Max)":"11.5W (Tc)","Supplier Device Package":"6-PQFN (2x2) (DFN2020)","Gate Charge (Qg) (Max) @ Vgs":"8 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"660 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"18.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.03","priceTiers":[{"qty":1,"price":"$1.03000","currency":"USD"},{"qty":10,"price":"$0.84400","currency":"USD"},{"qty":100,"price":"$0.65670","currency":"USD"},{"qty":500,"price":"$0.55660","currency":"USD"},{"qty":1000,"price":"$0.45341","currency":"USD"},{"qty":2000,"price":"$0.42683","currency":"USD"},{"qty":4000,"price":"$0.42683","currency":"USD"},{"qty":8000,"price":"$0.40651","currency":"USD"},{"qty":12000,"price":"$0.38774","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c10f2e57a66953a8c4e9377bac56f451.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRL60HS118/alternatives.json"},"ai":{"faq":[{"question":"Can I use the IRL60HS118 in a high-side switching application?","answer":"Yes, as an N-channel MOSFET it can be used in a high-side configuration, but it requires a gate voltage higher than the source voltage to turn on fully. With a 60 V drain-source rating and a gate drive range of 4.5 V to 10 V, a charge pump or bootstrap circuit is needed to drive the gate above the supply rail in a high-side switch. The low gate charge of 8 nC at 4.5 V makes the drive circuit simpler than for larger FETs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRL60HS118","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRL60HS118 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}