{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRL540NSTRR","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRL540NSTRR","canonicalUrl":"https://icboms.com/infineon/IRL540NSTRR","factsUrl":"https://icboms.com/api/mcp/products/IRL540NSTRR","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, IRL540NSTRR, N-Channel MOSFET, 100V Vdss, 36A Id, 44mOhm Rds(on) at 10V, 74nC Qg, TO-263-3 D2PAK surface mount, -55°C to 175°C junction.","salesMarkdown":"## HEXFET N-channel at 100 V, 36 A — the switching workhorse The Infineon IRL540NSTRR is a 100 V, 36 A N-channel MOSFET from the HEXFET series, built on planar stripe technology. It comes in a TO-263-3 D2PAK surface-mount package with a large tab for heat sinking. The 2 V max gate threshold means a 5 V logic signal can fully turn it on, so no separate gate-driver rail is needed in many designs. With a junction temperature range from -55°C to 175°C, it handles the thermal cycling of industrial and automotive environments. The 74 nC gate charge at 5 V is moderate — a standard gate-driver IC can switch it in the tens of kilohertz without excessive drive loss. For existing designs, the only supply channel is the independent distribution market — surplus, overstock, or verified pull inventory. Each unit must be date-code traced and tested for authenticity, since the risk of counterfeit or re-marked parts rises once a device leaves the authorized factory pipeline. The closest functional alternative within the same voltage and current class would be a current-production 100 V N-channel in D2PAK with similar Rds(on) and gate threshold — but pin-compatibility should be verified against the original footprint and driver circuit. The 44 mOhm Rds(on) at 18 A, 10 V sets the conduction loss at full load. That heat must be sunk through the D2PAK tab to a copper plane or heatsink. The 74 nC gate charge at 5 V means a 1 A gate driver can charge the gate in about 74 ns, enabling switching frequencies up to several hundred kilohertz before gate-drive losses become significant. Because the IRL540NSTRR is obsolete, we source it through our independent supply network — verified surplus, overstock, and qualified pull inventory. Each lot is inspected for marking consistency, date-code traceability, and electrical test against the original datasheet limits. No stock or lead-time number is published because the supply is dynamic; the RFQ is the only reliable way to commit a BOM line.","metaTitle":"IRL540NSTRR HEXFET N-Channel MOSFET, 100V 36A 44mOhm","metaDescription":"IRL540NSTRR obsolete HEXFET N-Channel MOSFET from Infineon. 100V Vdss, 36A Id, 44mOhm Rds(on) at 10V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"44mOhm @ 18A, 10V","Power Dissipation (Max)":"3.8W (Ta), 140W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"74 nC @ 5 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"1800 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4V, 10V","Current - Continuous Drain (Id) @ 25°C":"36A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8358","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/4bb7d8ab131cf2037a7f806b94d927d5.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRL540NSTRR?","answer":"At 4 V gate drive the on-resistance is higher — the datasheet specifies drive voltage for both minimum and maximum Rds(on) at 4 V and 10 V respectively."},{"question":"What is the Vgs threshold of IRL540NSTRR?","answer":"The maximum gate threshold voltage (Vgs(th)) is 2 V at 250 µA drain current. This logic-level threshold allows the MOSFET to be fully turned on by a 5 V logic signal."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRL540NSTRR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRL540NSTRR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}