{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRL2203NSTRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRL2203NSTRLPBF","canonicalUrl":"https://icboms.com/infineon/IRL2203NSTRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRL2203NSTRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET series IRL2203NSTRLPBF, N-Channel MOSFET, 30 V Vdss, 116 A continuous drain, 7 mOhm Rds(on) at 60 A, 10 V gate drive, TO-263-3 (D2PAK) surface mount, -55 to 175 °C.","salesMarkdown":"The Infineon IRL2203NSTRLPBF is a HEXFET series N-channel power MOSFET in a TO-263-3 (D2PAK) surface-mount package. The gate threshold is specified at a maximum of 3 V at 250 µA, so it responds to logic-level drive signals. The IRL2203NSTRLPBF carries an official obsolete product status. For a board that came in with a dead short on the drain — and you trace it to this FET — the replacement hunt starts with surplus or broker stock. The D2PAK footprint is common, so a pin-compatible alternative from the same or another vendor is the practical path for a repair or a BOM line that needs filling. ## Gate charge and switching — what the numbers mean The maximum gate charge is 60 nC at 4.5 V, and the input capacitance (Ciss) is 3290 pF at 25 V drain-source.","metaTitle":"IRL2203NSTRLPBF N-Channel MOSFET, 30V, 7mOhm, D2PAK","metaDescription":"IRL2203NSTRLPBF HEXFET N-Channel MOSFET, 30V drain-source, 7mOhm Rds(on) at 60A, 10V gate drive. D2PAK surface mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"7mOhm @ 60A, 10V","Power Dissipation (Max)":"3.8W (Ta), 180W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"60 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"3290 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"116A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.0800","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ef2352ef43d9432102a7334d6212d4a9.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for IRL2203NSTRLPBF?","answer":"For a pin-compatible swap in the D2PAK footprint, look for an N-channel MOSFET with similar ratings — 30 V Vdss, 7 mOhm or lower Rds(on), and logic-level gate threshold. A cross-reference search against the HEXFET family or a parametric filter on the D2PAK package will yield candidates. The part is obsolete, so a direct replacement from surplus stock is the most straightforward path for existing boards."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRL2203NSTRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRL2203NSTRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}