{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRL1404ZPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRL1404ZPBF","canonicalUrl":"https://icboms.com/infineon/IRL1404ZPBF","factsUrl":"https://icboms.com/api/mcp/products/IRL1404ZPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRL1404ZPBF, HEXFET® series, N-channel MOSFET, 40 V Vdss, 75 A continuous drain, 3.1 mOhm Rds(on) at 10 V, logic-level gate, TO-220AB through-hole, -55 to 175 °C junction.","salesMarkdown":"## 3.1 mOhm at 75 A — the conduction loss floor The IRL1404ZPBF is an Infineon HEXFET N-channel MOSFET rated 40 V drain-source and 75 A continuous drain at 25 °C case temperature. The headline spec is the 3.1 mOhm maximum on-resistance at Vgs=10 V and Id=75 A — at full load the I²R loss is under 18 W, which keeps the junction within the 175 °C ceiling with a moderate heatsink. The logic-level gate threshold of 2.7 V max at 250 µA means a 5 V or 3.3 V MCU output can turn it on hard, though the datasheet recommends 4.5 V drive for the lowest Rds(on). ## 175 °C junction — where this 40 V FET goes The operating junction range spans -55 to 175 °C, which is wider than the typical 150 °C ceiling for logic-level FETs. That 25 °C headroom matters in under-hood automotive, industrial motor-drive enclosures, and downhole instrumentation where ambient air hits 125 °C and the junction needs room to breathe under ripple current. The TO-220AB package with the metal tab solders to a PCB copper plane or bolts to a chassis heatsink — the 230 W power dissipation rating assumes the tab is held at 25 °C. ## 110 nC gate charge — sizing the driver Total gate charge at 5 V is 110 nC. For a 100 kHz switching regulator, that translates to 11 mA of average gate-drive current — well within a standard half-bridge driver IC. The input capacitance of 5080 pF at 25 V drain-source sets the Miller plateau width; a gate resistor in the 10–22 Ω range keeps the switching edge under control without excessive ringing. Through-hole mounting in the TO-220-3 footprint means the gate-drive loop can be kept tight with a local resistor and Schottky catch diode soldered directly to the leads.","metaTitle":"IRL1404ZPBF MOSFET, N-Ch 40V 75A TO-220AB, 3.1mOhm Rds(on)","metaDescription":"IRL1404ZPBF N-channel HEXFET MOSFET, 40V 75A, 3.1mOhm Rds(on) at 10V. TO-220AB, -55 to 175°C.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.7V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"3.1mOhm @ 75A, 10V","Power Dissipation (Max)":"230W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"110 nC @ 5 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"5080 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"75A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.90000","currency":"USD"},{"qty":10,"price":"$2.60100","currency":"USD"},{"qty":100,"price":"$2.09030","currency":"USD"},{"qty":500,"price":"$1.71738","currency":"USD"},{"qty":1000,"price":"$1.43115","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c1fc3e8540306f5150872a5bfa043b06.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRL1404ZPBF?","answer":"3.1 mOhm maximum at Vgs=10 V and Id=75 A. At 4.5 V drive the on-resistance is higher but still well below 5 mOhm — the exact value is in the datasheet output characteristic curve."},{"question":"Can IRL1404ZPBF be used as a replacement for IRF1404?","answer":"The IRL1404ZPBF is a logic-level gate variant of the IRF1404 family. Both are 40 V N-channel FETs in TO-220AB, but the IRL1404ZPBF has a lower gate threshold (2.7 V vs ~4 V) and a lower Rds(on) at 10 V. It is a drop-in replacement in most circuits, but confirm the gate-drive voltage — the IRF1404 needs 10 V to saturate, while the IRL1404ZPBF saturates at 4.5 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRL1404ZPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRL1404ZPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}