{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFZ46ZSTRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFZ46ZSTRLPBF","canonicalUrl":"https://icboms.com/infineon/IRFZ46ZSTRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFZ46ZSTRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRFZ46ZSTRLPBF, N-channel power MOSFET, 55 V drain-source, 51 A switching current, 13.6 mOhm Rds(on) max at 10 V, 82 W power dissipation, surface mount, -55°C to 175°C junction temperature.","salesMarkdown":"## 55 V N-channel HEXFET — the conduction-loss story The IRFZ46ZSTRLPBF is an Infineon HEXFET® N-channel power MOSFET rated for 55 V drain-source and 51 A continuous switching current. That 55 V rating gives comfortable margin on a 48 V nominal bus (typically 54 V max under float) and plenty of headroom for a 24 V system where you want the lowest Rds(on) available in the voltage class. ## Rds(on) and gate drive — what the numbers mean at the bench The 13.6 mOhm Rds(on) is specified at Vgs = 10 V, which is the standard gate-drive voltage for a 12 V rail or a bootstrap supply. If your gate driver only delivers 5 V, the on-resistance will be higher — the datasheet's typical curve shows the Rds(on) roughly doubles below 6 Vgs. The 46 nC total gate charge at 10 V means a gate driver sourcing 1 A can switch the FET in about 46 ns; at 100 kHz switching frequency, the gate drive power is roughly Qg × Vgs × fsw = 46 nC × 10 V × 100 kHz = 46 mW, well within a typical driver's budget. The ±20 V maximum gate-source rating gives headroom for gate-drive overshoot in hard-switching topologies — a 12 V gate drive with 5 V of ringing stays inside the window. The 4 V threshold at 250 µA is a typical logic-level threshold; the FET turns on hard above 6 Vgs. ## Package, temperature, and board integration Surface-mount package — the specific case style is a D2PAK (TO-263) compatible footprint. Derate power above 25 °C per the thermal resistance in the datasheet.","metaTitle":"IRFZ46ZSTRLPBF N-Channel MOSFET, 55V, 13.6mOhm, HEXFET","metaDescription":"IRFZ46ZSTRLPBF N-channel power MOSFET, 55V drain-source, 13.6mOhm Rds(on) at 10V. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®","has_mpn":"IRFZ46","power_w":"82.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0015","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"55.0","Vgs(Th) (Max) @ Id":"4 V @ 250µA","switching_current_a":"51.0","Rds On (Max) @ Id, Vgs":"13.6mOhm @ 31 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"46 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.71","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a1abd63b276db54034655a1978bee283.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFZ46ZSTRLPBF at 10V?","answer":"13.6 mOhm maximum at Vgs = 10 V and Id = 31 A. This is the conduction loss spec for a 10 V gate drive — the typical value is lower, but the max is the number to use for worst-case thermal design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFZ46ZSTRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFZ46ZSTRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}