{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFZ44ZSPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFZ44ZSPBF","canonicalUrl":"https://icboms.com/infineon/IRFZ44ZSPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFZ44ZSPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® N-Channel MOSFET, 55 V Vdss, 51 A continuous drain, 13.9 mΩ Rds(on) at 10 V gate drive, D2PAK (TO-263) surface-mount package, -55°C to 175°C operating junction temperature.","salesMarkdown":"## What this N-channel HEXFET brings to a power stage The Infineon IRFZ44ZSPBF is a 55 V, 51 A N-channel MOSFET from the HEXFET family, built on planar stripe technology. The D2PAK (TO-263) surface-mount package carries an 80 W power dissipation rating at the case, so the thermal design — PCB copper area and via stitching under the tab — determines how much current it can actually handle in a given layout. That is the number to use for conduction loss at full load. The maximum gate threshold voltage of 4 V at 250 µA means the device is fully enhanced only when the gate-source voltage exceeds 4 V; a 5 V logic-level gate drive may not saturate it to the minimum Rds(on), so the design should budget for higher on-resistance if the gate drive is below 10 V. The 80 W power dissipation at the case assumes a proper thermal interface to a heatsink or PCB copper plane — without that, the junction will exceed 175°C well before reaching 80 W in still air.","metaTitle":"IRFZ44ZSPBF N-Channel MOSFET, 55V 51A, 13.9mΩ Rds(on)","metaDescription":"IRFZ44ZSPBF HEXFET N-Channel MOSFET, 55V Vdss, 51A Id, 13.9mΩ Rds(on) at 10V. Active lifecycle. D2PAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"13.9mOhm @ 31A, 10V","Power Dissipation (Max)":"80W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"43 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"1420 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"51A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.9800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9d45e4085e3e9dd22dde0bdbb7938cbb.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRFZ44ZSPBF/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of IRFZ44ZSPBF?","answer":"The maximum on-resistance is 13.9 mΩ at a drain current of 31 A with a 10 V gate-source voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFZ44ZSPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFZ44ZSPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}