{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFZ44Z","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFZ44Z","canonicalUrl":"https://icboms.com/infineon/IRFZ44Z","factsUrl":"https://icboms.com/api/mcp/products/IRFZ44Z","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series, IRFZ44Z, N-Channel MOSFET, 55 V drain-to-source, 51 A continuous drain at 25°C, 13.9 mOhm Rds(on) at 31 A and 10 V gate drive, 43 nC gate charge, TO-220-3 through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"The 80 W power dissipation limit at the case sets the thermal budget — real-world current derating depends on heatsink selection and ambient temperature, not just the headline 51 A figure. ## Gate drive voltage — 10 V required for rated Rds(on) This part specifies a drive voltage of 10 V for the maximum Rds(on) rating, with a gate threshold of 4 V maximum at 250 µA. A 5 V logic-level gate signal will not fully enhance the channel — expect on-resistance roughly double the 13.9 mOhm spec at 4.5 V drive. MSL 1 out of the bag — no bake needed before reflow if stored dry. For a new design or a BOM line that needs supply continuity, qualifying a current-production N-channel MOSFET in the same 55 V / 50 A class with a TO-220 footprint is the practical next step.","metaTitle":"IRFZ44Z HEXFET N-Channel MOSFET, 55V 51A TO-220","metaDescription":"IRFZ44Z N-channel HEXFET MOSFET, 55 Vdss, 51 A continuous drain, 13.9 mOhm Rds(on) at 10 V. TO-220AB.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"13.9mOhm @ 31A, 10V","Power Dissipation (Max)":"80W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"43 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"1420 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"51A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.9900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9d45e4085e3e9dd22dde0bdbb7938cbb.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRFZ44Z/alternatives.json"},"ai":{"faq":[{"question":"Is IRFZ44Z obsolete?","answer":"Yes, the IRFZ44Z carries an obsolete lifecycle status. It is no longer in production and must be sourced through surplus or independent channels."},{"question":"What is a direct replacement for IRFZ44Z?","answer":"No official successor is listed for the IRFZ44Z. A current-production N-channel MOSFET in the 55 V to 60 V range with a TO-220 package, 50 A+ continuous drain rating, and similar gate charge should be evaluated for pin-compatible fit and Rds(on) parity."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFZ44Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFZ44Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T14:29:05.377Z","lastPublished":"2026-07-16T14:29:05.377Z","indexable":true}}