{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFZ44VS","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFZ44VS","canonicalUrl":"https://icboms.com/infineon/IRFZ44VS","factsUrl":"https://icboms.com/api/mcp/products/IRFZ44VS","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRFZ44VS, HEXFET® series, N-Channel MOSFET, 60V Vdss, 55A Id, 16.5mOhm Rds(on) @ 10V, D2PAK (TO-263), -55°C to 175°C.","salesMarkdown":"The IRFZ44VS is listed as Obsolete. Infineon no longer manufactures this specific HEXFET N-channel MOSFET. Sourcing is possible, but each lot needs careful date-code and counterfeit screening before it goes onto a board. ## 60 V, 55 A, 16.5 mΩ — the numbers that matter for a replacement That combination — 60 V blocking, 55 A carrying, sub-20 mOhm Rds(on) — puts it in the medium-voltage, high-current switching sweet spot: DC-DC converters, motor drives, battery management, and power supply output stages. The gate charge is 67 nC at 10 V, so the driver needs to source about 67 nC per switching cycle; a typical gate-drive IC or a totem-pole pair handles that without trouble. ## D2PAK footprint — the mechanical constraint The IRFZ44VS comes in the D2PAK (TO-263-3) surface-mount package. That is a three-lead tabbed package with a large exposed drain pad on the bottom.","metaTitle":"IRFZ44VS HEXFET N-Channel MOSFET, 60V 55A D2PAK, Obsolete","metaDescription":"IRFZ44VS N-Channel MOSFET, 60V Vdss, 55A Id, 16.5mOhm Rds(on) at 10V. D2PAK package. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"16.5mOhm @ 31A, 10V","Power Dissipation (Max)":"115W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"67 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1812 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"55A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/44b9b1fd0b65e5bb09de5204780f98ad.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for IRFZ44VS?","answer":"There is no official Infineon successor listed for the IRFZ44VS. For a pin-compatible replacement in the D2PAK footprint, look for an N-channel MOSFET with a 60 V Vdss rating, continuous drain current of at least 55 A, and Rds(on) at or below 16.5 mOhm at 10 V gate drive. Parts from the same HEXFET family or from competitors like STMicroelectronics or ON Semiconductor in the D2PAK package are candidates, but each must be verified against the specific switching and thermal requirements of your design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFZ44VS","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFZ44VS when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}