{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFZ44NSPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFZ44NSPBF","canonicalUrl":"https://icboms.com/infineon/IRFZ44NSPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFZ44NSPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® N-Channel MOSFET, IRFZ44NSPBF, 55 V drain-source, 49 A continuous drain at 25°C case, 17.5 mOhm max Rds(on) at 10 V gate drive, 63 nC gate charge, D2PAK (TO-263) surface-mount package, -55°C to 175°C junction temperature.","salesMarkdown":"## 55 V, 49 A, 17.5 mOhm — the switching sweet spot The IRFZ44NSPBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET series, built on planar stripe technology. The D2PAK (TO-263) surface-mount package suits automated assembly on power-ground planes with a thermal pad for heatsinking. ## Gate charge and switching losses With a maximum gate charge of 63 nC at 10 V drive, this part falls in the moderate-charge class for a 49 A FET. For a 100 kHz switching frequency, the gate-drive power loss is roughly Qg × Vgs × fsw = 63 nC × 10 V × 100 kHz = 63 mW, which is manageable with a standard gate-driver IC. The input capacitance of 1470 pF at 25 V drain-source gives a rough idea of the switching speed — expect turn-on and turn-off delays in the tens of nanoseconds with a 10 Ω gate resistor. ## Temperature range and thermal management The maximum power dissipation is 3.8 W at 25°C ambient (still air) and 94 W at 25°C case temperature. The 94 W figure assumes the case is held at 25°C via a heatsink; in practice, a TO-263 on a 1 oz copper pad on a 2-layer board will dissipate roughly 2–3 W before the junction hits 175°C in free air. For continuous 49 A, a substantial heatsink or forced airflow is mandatory — the junction-to-case thermal resistance is not listed here, but the 94 W rating at Tc = 25°C implies roughly 1.6°C/W junction-to-case. Supplied in a D2PAK (TO-263-3, 2 leads plus tab) surface-mount package. The gate threshold voltage is 4 V maximum at 250 µA drain current, so logic-level drive at 3.3 V will not fully enhance the channel — a 5 V or 10 V gate drive is required for rated Rds(on). This means no last-time-buy risk for new designs, and the usual supply-channel availability through independent distribution. The part is RoHS-compliant as indicated by the 'SPBF' suffix (lead-free plating).","metaTitle":"IRFZ44NSPBF N-Channel MOSFET, 55V 49A HEXFET, D2PAK","metaDescription":"IRFZ44NSPBF N-Channel MOSFET from Infineon's HEXFET series. 55 V drain-source, 49 A continuous drain, 17.5 mOhm Rds(on) at 10 V. D2PAK surface mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"17.5mOhm @ 25A, 10V","Power Dissipation (Max)":"3.8W (Ta), 94W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"63 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"1470 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"49A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8400","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1ea212fe0ccd0fa5722623cdee6eaf3a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRFZ44NSPBF/alternatives.json"},"ai":{"faq":[{"question":"Can I use IRFZ44NSPBF as a replacement for IRFZ44N?","answer":"The IRFZ44N is a through-hole TO-220 package, while the IRFZ44NSPBF is a surface-mount D2PAK (TO-263). They share the same die and electrical ratings (55 V, 49 A, 17.5 mOhm), so the IRFZ44NSPBF can replace the IRFZ44N in a design if the PCB footprint is changed to accommodate the D2PAK land pattern. The gate charge and switching characteristics are identical."},{"question":"What is the gate charge of IRFZ44NSPBF?","answer":"The maximum gate charge is 63 nC at 10 V gate-source voltage."},{"question":"What is the Rds(on) of IRFZ44NSPBF?","answer":"The maximum on-resistance is 17.5 milliohms at 25 A drain current and 10 V gate drive."},{"question":"What package is IRFZ44NSPBF?","answer":"It comes in a D2PAK (TO-263-3) surface-mount package, also referred to as D²Pak (2 leads plus tab)."},{"question":"Is IRFZ44NSPBF RoHS compliant?","answer":"Yes, the 'SPBF' suffix indicates lead-free (RoHS-compliant) plating."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFZ44NSPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFZ44NSPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}