{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFZ34NSTRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFZ34NSTRLPBF","canonicalUrl":"https://icboms.com/infineon/IRFZ34NSTRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFZ34NSTRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRFZ34NSTRLPBF, HEXFET® N-channel MOSFET, 55V Vdss, 29A Id, 40 mOhm Rds(on) at 10V, D2PAK surface mount, -55°C to 175°C junction temperature.","salesMarkdown":"## HEXFET N-channel, 55V 29A in D2PAK The IRFZ34NSTRLPBF: It comes in a D2PAK (TO-263) surface-mount package, well-suited for automated assembly and moderate power dissipation up to 68 W at the case. At 40 mOhm maximum, the conduction loss at 16 A is about 10 W — within the 68 W case-rated dissipation. The cut-tape option (CT) is available for prototyping or low-quantity builds. Store the reels in a dry environment.","metaTitle":"IRFZ34NSTRLPBF N-Channel MOSFET, 55V 29A D2PAK","metaDescription":"IRFZ34NSTRLPBF N-channel HEXFET MOSFET, 55V Vdss, 29A Id, 40 mOhm Rds(on) at 10V. D2PAK surface mount. Active lifecycle.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"IRFZ34","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"40mOhm @ 16A, 10V","Power Dissipation (Max)":"3.8W (Ta), 68W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"700 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"29A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5200","priceTiers":[{"qty":1,"price":"$1.80000","currency":"USD"},{"qty":10,"price":"$1.61200","currency":"USD"},{"qty":100,"price":"$1.25660","currency":"USD"},{"qty":800,"price":"$0.99483","currency":"USD"},{"qty":1600,"price":"$0.78539","currency":"USD"},{"qty":2400,"price":"$0.73303","currency":"USD"},{"qty":5600,"price":"$0.69638","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/97cd75683c8149664c72cce554486731.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRFZ34NSTRLPBF/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold for IRFZ34NSTRLPBF?","answer":"The maximum gate threshold voltage is 4 V at 250 µA drain current. For full enhancement and the specified 40 mOhm on-resistance, a 10 V gate drive is required."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFZ34NSTRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFZ34NSTRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}