{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFZ34NPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFZ34NPBF","canonicalUrl":"https://icboms.com/infineon/IRFZ34NPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFZ34NPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies HEXFET® N-Channel MOSFET, IRFZ34NPBF, 55 Vdss, 29 A continuous drain, 40 mOhm Rds(on) at 10 V, TO-220-3 (TO-220AB) through-hole package, tube.","salesMarkdown":"## 55 V, 29 A power-switching envelope The IRFZ34NPBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET® series, rated for 55 V drain-to-source breakdown and 29 A continuous drain current at 25 °C case temperature. This places it in the 50-60 V, 25-30 A sweet spot for medium-power DC-DC converters, motor-bridge pre-drives, and battery-management disconnect switches. ## Conduction loss and gate-drive budget Maximum on-resistance is 40 mOhm at 16 A drain current with 10 V gate drive. At 29 A full load, the conduction loss (I²R) reaches roughly 34 W before accounting for the Rds(on) positive temperature coefficient — the 68 W case-power limit provides derating headroom for a properly heatsinked installation. Gate charge totals 34 nC at 10 V, and input capacitance is 700 pF at 25 V drain bias. A 10 V gate-drive rail is the recommended minimum for achieving the rated on-resistance; the gate threshold is 4 V maximum at 250 µA, so 5 V logic can turn the device on but with higher Rds(on). The ±20 V Vgs absolute maximum accommodates 12 V automotive gate-drive rails without external clamping. ## Temperature grade and package Operating junction temperature spans -55 to 175 °C, qualifying the part for industrial and automotive under-hood environments where the ambient exceeds 85 °C. The TO-220AB through-hole package with a metal tab provides a low thermal-resistance path to a heatsink — the 68 W dissipation figure assumes the case is held at 25 °C.","metaTitle":"IRFZ34NPBF MOSFET, N-Channel 55V 29A TO-220AB","metaDescription":"IRFZ34NPBF N-channel HEXFET MOSFET, 55 Vdss, 29 A continuous drain, 40 mOhm Rds(on). Active production, ROHS3 compliant. Quoted to order.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"IRFZ34","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"40mOhm @ 16A, 10V","Power Dissipation (Max)":"68W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"700 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"29A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.9200","priceTiers":[{"qty":1,"price":"$1.05000","currency":"USD"},{"qty":10,"price":"$0.93600","currency":"USD"},{"qty":100,"price":"$0.72980","currency":"USD"},{"qty":500,"price":"$0.60284","currency":"USD"},{"qty":1000,"price":"$0.47593","currency":"USD"},{"qty":2000,"price":"$0.44420","currency":"USD"},{"qty":5000,"price":"$0.42199","currency":"USD"},{"qty":10000,"price":"$0.41385","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IRFZ34NPBF/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy IRFZ34NPBF and how do I get a price?","answer":"IRFZ34NPBF is an active-production part from Infineon. It is sourced to order against your BOM quantity through independent distribution; availability and current pricing are confirmed at RFQ time. No stock-holding claim is made — submit a quote request for your target quantity and date-code preference."},{"question":"Will IRFZ34NPBF drop into a panel that was specified around IMZA65R027M1HXKSA1 without rewiring?","answer":"No. The IMZA65R027M1HXKSA1 is a 650 V CoolSiC™ MOSFET with a different gate-drive voltage range (+23 V / -5 V) and a higher gate charge (63 nC). The IRFZ34NPBF is a 55 V silicon HEXFET with a ±20 V Vgs limit. The two parts are not pin-compatible substitutes — a board spin and gate-drive redesign would be required."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFZ34NPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFZ34NPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}