{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFZ34NLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFZ34NLPBF","canonicalUrl":"https://icboms.com/infineon/IRFZ34NLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFZ34NLPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRFZ34NLPBF, Infineon HEXFET® N-Channel MOSFET, 55 V Vdss, 29 A continuous drain, 40 mOhm Rds(on) at 10 V, TO-262-3 (I²Pak) through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## Device overview and key ratings The IRFZ34NLPBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET® series, housed in a TO-262-3 (I²Pak) through-hole package. ## Switching and drive characteristics Gate charge is 34 nC at 10 V, which sets the energy per switching cycle and influences gate-driver selection. Input capacitance measures 700 pF at 25 V drain-source, a figure that affects switching losses and drive current requirements. These parameters are directly relevant when sizing the gate-drive circuit and estimating switching losses in a converter or motor-drive application. ## Thermal and power dissipation Maximum power dissipation is 3.8 W at ambient temperature (Ta) and 68 W at case temperature (Tc). The TO-262 package with long leads (I²Pak) is designed for through-hole mounting on a PCB or heatsink. The IRFZ34NLPBF is officially classified as Obsolete by the manufacturer. Sourcing is limited to surplus inventory and independent distribution channels.","metaTitle":"IRFZ34NLPBF HEXFET N-Channel MOSFET, 55 V, 29 A, TO-262","metaDescription":"IRFZ34NLPBF N-channel HEXFET MOSFET: 55 V Vdss, 29 A continuous drain, 40 mOhm Rds(on) at 10 V. TO-262 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"40mOhm @ 16A, 10V","Power Dissipation (Max)":"3.8W (Ta), 68W (Tc)","Supplier Device Package":"TO-262","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"700 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"29A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/97cd75683c8149664c72cce554486731.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is a direct replacement for IRFZ34NLPBF?","answer":"No official direct replacement is listed in the manufacturer's records. Any substitute must be evaluated for pin-compatibility, voltage rating (55 V), current rating (29 A), on-resistance (40 mOhm), gate charge, and thermal performance. A cross-reference search against the original BOM is recommended."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFZ34NLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFZ34NLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}