{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFU4510PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFU4510PBF","canonicalUrl":"https://icboms.com/infineon/IRFU4510PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFU4510PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRFU4510PBF N-channel MOSFET, 100 V drain-source, 56 A continuous drain at 25 °C, 13.9 mOhm Rds(on) at 10 V, through-hole IPAK (TO-251AA) package, -55°C to 175°C junction temperature.","salesMarkdown":"The IRFU4510PBF: The ±20 V gate-source maximum gives headroom for 12 V or 15 V gate drive rails without clamping. ## Gate charge and switching — sizing the driver Total gate charge is 81 nC at 10 V. The 3031 pF input capacitance at 50 V drain means the driver must source enough current to charge Ciss quickly. ## Through-hole IPAK — board-mounting and thermal path The IRFU4510PBF comes in a through-hole IPAK package with short leads. The -55°C to 175°C junction temperature range suits high-temperature environments.","metaTitle":"IRFU4510PBF HEXFET N-Channel MOSFET, 100 V, 56 A, IPAK","metaDescription":"IRFU4510PBF N-channel HEXFET MOSFET: 100 Vdss, 56 A continuous drain, 13.9 mOhm Rds(on) at 10 V. Active production, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 100µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"13.9mOhm @ 38A, 10V","Power Dissipation (Max)":"143W (Tc)","Supplier Device Package":"IPAK (TO-251AA)","Gate Charge (Qg) (Max) @ Vgs":"81 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"3031 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"56A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.84","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.18000","currency":"USD"},{"qty":10,"price":"$1.96000","currency":"USD"},{"qty":100,"price":"$1.57530","currency":"USD"},{"qty":500,"price":"$1.29424","currency":"USD"},{"qty":1000,"price":"$1.07852","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/428b37ebe2fc3f8b921469fa6570a462.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Vgs threshold of IRFU4510PBF?","answer":"The maximum gate-source threshold voltage is 4 V at 100 µA drain current. This means the FET starts conducting when Vgs exceeds about 2–4 V, but the 10 V drive level is needed to achieve the rated 13.9 mOhm Rds(on)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFU4510PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFU4510PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}