{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFSL7730PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFSL7730PBF","canonicalUrl":"https://icboms.com/infineon/IRFSL7730PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFSL7730PBF","rawCanonicalId":null},"summary":{"shortDescription":"IRFSL7730PBF, HEXFET, StrongIRFET, N-Channel Power MOSFET, 75 V, 195 A switching current, 2.6 mOhm Rds(on) at 100 A, 407 nC gate charge, Through Hole, Bulk.","salesMarkdown":"## Gate charge and switching budget Total gate charge is 407 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current needed is 40.7 mA — well within the capability of a standard driver IC, but the peak current during the Miller plateau requires a driver with at least 2 A peak output to keep switching times under 100 ns. The ±20 V maximum gate-source rating gives headroom for gate-drive overshoot in hard-switching topologies. ## Thermal and package reality for the BOM 375 W maximum power dissipation at 25 °C case temperature. The through-hole package (Bulk) requires a copper pad or heatsink on the tab — the 175°C Tj max means the thermal interface material and mounting torque must be specified for the full temperature swing.","metaTitle":"IRFSL7730PBF N-Channel MOSFET, 75 V, 195 A, 2.6 mOhm","metaDescription":"IRFSL7730PBF N-Channel HEXFET Power MOSFET, 75 V, 195 A switching current, 2.6 mOhm Rds(on) at 100 A.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®, StrongIRFET™","has_mpn":"IRFSL7730","power_w":"375.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Through Hole","capacitance_uf":"0.0137","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"75.0","Vgs(Th) (Max) @ Id":"3.7 V @ 250µA","switching_current_a":"195.0","Rds On (Max) @ Id, Vgs":"2.6mOhm @ 100 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"407 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.71","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f4cd10590ef6712ad6ccf2923ba43f9c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between IRFSL7730 and IRFSL7730PBF?","answer":"The IRFSL7730PBF suffix indicates lead-free (PbF) plating on the terminals. The electrical specifications — 75 V, 195 A, 2.6 mOhm Rds(on), 407 nC gate charge — are identical between the two ordering codes."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFSL7730PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFSL7730PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}