{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFSL7430PBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFSL7430PBF","canonicalUrl":"https://icboms.com/infineon/IRFSL7430PBF","factsUrl":"https://icboms.com/api/mcp/products/IRFSL7430PBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRFSL7430PBF, N-Channel HEXFET® StrongIRFET™, 40 V, 195 A, 1.2 mOhm Rds(on) at 10 V, 460 nC gate charge, D2PAK (TO-263), -55 to 175 °C.","salesMarkdown":"## What this 40 V N-channel MOSFET delivers The Infineon IRFSL7430PBF is a 40 V N-channel MOSFET in the D2PAK (TO-263) surface-mount package, part of the HEXFET® and StrongIRFET™ series. It switches up to 195 A continuous drain current with a maximum on-resistance of 1.2 mOhm at 100 A, 10 V gate drive — a combination that keeps conduction losses low in high-current power paths like motor drives, DC-DC converters, and battery management systems. Gate charge is 460 nC at 10 V, which sets the gate-driver current requirement and switching loss budget. The junction temperature range spans -55 to 175 °C, so the part handles thermal cycling in industrial or automotive under-hood environments without derating surprises. ## Key ratings and what they mean for the BOM The 460 nC gate charge at 10 V means the gate driver must source and sink a significant charge per cycle. The 375 W power dissipation rating assumes an infinite heatsink; real-world dissipation depends on PCB copper and airflow. The 175 °C junction maximum is the hard limit. ## Lifecycle and sourcing posture The IRFSL7430PBF carries an Active lifecycle status from Infineon, so there is no near-term last-time-buy risk. It is suitable for new designs and production BOMs. The part is RoHS compliant per the lead-free finish (PBF suffix).","metaTitle":"IRFSL7430PBF N-Channel MOSFET, 40V 195A D2PAK","metaDescription":"IRFSL7430PBF N-Channel MOSFET, 40V, 195A, 1.2mOhm Rds(on) at 10V, 460nC gate charge, -55 to 175°C. Active, RoHS.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"HEXFET®, StrongIRFET™","power_w":"375.0","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0142","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"40.0","Vgs(Th) (Max) @ Id":"3.9 V @ 250µA","switching_current_a":"195.0","Rds On (Max) @ Id, Vgs":"1.2mOhm @ 100 A, 10 V","Operating Temperature High":"-55°C to 175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"460 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.83","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFSL7430PBF?","answer":"The maximum Rds(on) is 1.2 mOhm at 100 A drain current with a 10 V gate drive."},{"question":"Is IRFSL7430PBF RoHS compliant?","answer":"Yes, the PBF suffix indicates a lead-free, RoHS-compliant finish."},{"question":"What is the closest pin-compatible alternative to IRFSL7430PBF?","answer":"The IRFS7430PBF is a close variant; the difference is typically in the package lead form (D2PAK vs D2PAK with different lead bend). Verify the specific package code before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFSL7430PBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFSL7430PBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}