{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFSL3207ZPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFSL3207ZPBF","canonicalUrl":"https://icboms.com/infineon/IRFSL3207ZPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFSL3207ZPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET IRFSL3207ZPBF, N-Channel MOSFET, 75 V Vdss, 120 A Id, 4.1 mOhm Rds(on) at 75 A 10 V, 170 nC Qg, TO-262-3 through-hole package, -55 to 175 °C.","salesMarkdown":"## Gate charge and switching speed — what 170 nC means for the driver Total gate charge is 170 nC at 10 V. A driver sourcing 1 A peak charges the gate in roughly 170 ns; at 100 kHz switching, the average gate-drive current is 17 mA. The 6920 pF input capacitance at 50 V drain-source gives a rough Miller-plateau time constant — budget a gate resistor to control ringing on the switching node. ## Package and thermal path — TO-262 through-hole Housed in a TO-262-3 (I²Pak) through-hole package with long leads, the supplier device package is TO-262. The 300 W power dissipation at case temperature is the absolute maximum; the real thermal budget depends on the heatsink and airflow across the tab. The -55 °C to 175 °C junction range covers military-temperature applications — the upper limit exceeds the more common 150 °C ceiling, giving extra headroom in high-ambient enclosures.","metaTitle":"IRFSL3207ZPBF HEXFET N-Channel MOSFET, 75V 120A TO-262","metaDescription":"IRFSL3207ZPBF N-channel HEXFET power MOSFET, 75V Vdss, 120A Id, 4.1 mOhm Rds(on) at 10V. TO-262 package. Active production, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 150µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.1mOhm @ 75A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"TO-262","Gate Charge (Qg) (Max) @ Vgs":"170 nC @ 10 V","Drain to Source Voltage (Vdss)":"75 V","Input Capacitance (Ciss) (Max) @ Vds":"6920 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.39","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.39000","currency":"USD"},{"qty":10,"price":"$2.84500","currency":"USD"},{"qty":100,"price":"$2.30160","currency":"USD"},{"qty":500,"price":"$2.04586","currency":"USD"},{"qty":1000,"price":"$1.75176","currency":"USD"},{"qty":2000,"price":"$1.64947","currency":"USD"},{"qty":5000,"price":"$1.58250","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8c9cf3337d219c719f2202154ab0ef71.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFSL3207ZPBF?","answer":"This is the value used for conduction-loss calculations in the design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFSL3207ZPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFSL3207ZPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}