{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFS7734TRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFS7734TRLPBF","canonicalUrl":"https://icboms.com/infineon/IRFS7734TRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFS7734TRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET®, StrongIRFET™ series N-Channel MOSFET, IRFS7734TRLPBF, 75 V, 183 A, 3.5 mOhm @ 100 A, 10 V, 270 nC Qg, TO-263-3 D2Pak, -55 to 175 °C.","salesMarkdown":"## Gate charge and switching speed — the driver budget Total gate charge is 270 nC at 10 V, with an input capacitance of 10150 pF at 25 V drain-source. That Qg tells you the gate-driver current needed for a target frequency: at 100 kHz switching, the average gate current is 27 mA, well within a standard driver's capability. The 6 V and 10 V drive voltage levels let you trade Rds(on) against gate-drive loss — 10 V gives the lowest on-resistance, 6 V reduces driver dissipation at the cost of higher Rds(on). ## D2Pak rework — the tab is the thermal path The TO-263-3 (D2Pak) surface-mount package has a large exposed drain tab that carries the bulk of the heat. The 290 W power dissipation rating at case temperature assumes the tab is soldered to a substantial copper pour — a two-layer board with a small pad will derate that figure significantly. Rework: the tab's thermal mass means a hot-air station needs a preheat plate under the board to avoid lifting the pad when the tab wets. ROHS3 compliant. No official successor or second-source cross-reference is listed, so the BOM relies on this single source — budget for a qualified alternate if dual-sourcing is required.","metaTitle":"IRFS7734TRLPBF N-Channel MOSFET, 75 V, 183 A, 3.5 mOhm","metaDescription":"Infineon IRFS7734TRLPBF HEXFET N-channel MOSFET, 75 Vds, 183 A Id, 3.5 mOhm Rds(on) at 10 V. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"HEXFET®, StrongIRFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®, StrongIRFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.7V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"3.5mOhm @ 100A, 10V","Power Dissipation (Max)":"290W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"270 nC @ 10 V","Drain to Source Voltage (Vdss)":"75 V","Input Capacitance (Ciss) (Max) @ Vds":"10150 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"183A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.92","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.92000","currency":"USD"},{"qty":10,"price":"$2.42600","currency":"USD"},{"qty":100,"price":"$1.93130","currency":"USD"},{"qty":800,"price":"$1.63418","currency":"USD"},{"qty":1600,"price":"$1.38657","currency":"USD"},{"qty":2400,"price":"$1.31724","currency":"USD"},{"qty":5600,"price":"$1.26772","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/51d1a115c7d2e5b8249c38630a147c56.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFS7734TRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFS7734TRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}