{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFS4310TRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFS4310TRLPBF","canonicalUrl":"https://icboms.com/infineon/IRFS4310TRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFS4310TRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IRFS4310TRLPBF, HEXFET series, N-Channel MOSFET, 100V Vdss, 130A Id, 7mOhm Rds(on) @ 75A/10V, 250nC Qg @ 10V, -55°C to 175°C, D2PAK (TO-263AB), Surface Mount, ROHS3 compliant.","salesMarkdown":"## Gate drive and switching — 250 nC Qg at 10 V Total gate charge is 250 nC at 10 V gate drive. At a 100 kHz switching frequency that translates to 25 mA average gate-drive current — well within the capability of a standard MOSFET driver, but the peak current needed to charge the 7670 pF input capacitance in a few tens of nanoseconds demands a driver with at least 2 A peak output. The ±20 V maximum gate rating gives headroom for gate-drive overshoot in noisy environments. ## Package and mounting The D2PAK has a large exposed tab — rework requires a preheat zone around 150°C to avoid thermal shock to the die, and the tab solder joint must be inspected for voids; a hot-air station with a wide nozzle works, but the thermal mass means a longer soak than a small-signal SO-8. ## Lifecycle and compliance ROHS3 compliant. No official second-source or successor is listed, but the D2PAK footprint is standard across the industry — many 100 V N-channel MOSFETs in TO-263 share the same pad layout, though gate charge and Rds(on) vary.","metaTitle":"IRFS4310TRLPBF HEXFET N-Channel MOSFET, 100V 130A D2PAK","metaDescription":"IRFS4310TRLPBF N-channel HEXFET MOSFET, 100V drain-source, 130A continuous, 7 mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"7mOhm @ 75A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"250 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"7670 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"130A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.64","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.64000","currency":"USD"},{"qty":10,"price":"$3.89200","currency":"USD"},{"qty":100,"price":"$3.14880","currency":"USD"},{"qty":800,"price":"$2.79891","currency":"USD"},{"qty":1600,"price":"$2.39657","currency":"USD"},{"qty":2400,"price":"$2.25662","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2b4f16a3f687a3f6fe88d72f0e80e944.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFS4310TRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFS4310TRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}