{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFR3910TRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFR3910TRPBF","canonicalUrl":"https://icboms.com/infineon/IRFR3910TRPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFR3910TRPBF","rawCanonicalId":null},"summary":{"shortDescription":"IRFR3910TRPBF, HEXFET series, N-Channel MOSFET, 100 V drain-to-source, 16 A continuous drain, 115 mOhm Rds(on) at 10 V, 44 nC gate charge, DPAK surface-mount package, -55°C to 175°C junction temperature.","salesMarkdown":"## 100 V, 16 A N-channel — the HEXFET switching workhorse The IRFR3910TRPBF: It is housed in a DPAK (TO-252) surface-mount package, suited for automated assembly and moderate-power switching stages. The 115 mOhm maximum on-resistance at 10 A gate drive of 10 V defines the conduction loss floor. The 79 W package thermal capability can handle the dissipation with adequate copper area on the drain tab. ## Gate charge and switching — sizing the driver Total gate charge is 44 nC at 10 V gate drive. The 640 pF input capacitance at 25 V drain bias gives a rough handle on the switching speed. The ±20 V maximum gate-source rating provides margin for gate-drive overshoot in hard-switching topologies; a 10 V drive voltage is specified for the rated Rds(on). ## Temperature range and package — design-in notes This suits the part for engine-bay electronics, industrial motor drives, and other high-ambient environments where the die sees sustained thermal stress. The 79 W maximum power dissipation assumes the tab is held at 25°C — real-world derating follows the package's thermal resistance, which depends on board copper area and airflow.","metaTitle":"IRFR3910TRPBF N-Channel MOSFET, 100V, 16A, DPAK","metaDescription":"IRFR3910TRPBF HEXFET N-channel MOSFET, 100 Vdss, 16 A continuous drain, 115 mOhm Rds(on) at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"115mOhm @ 10A, 10V","Power Dissipation (Max)":"79W (Tc)","Supplier Device Package":"D-Pak","Gate Charge (Qg) (Max) @ Vgs":"44 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"640 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"16A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.22","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.22000","currency":"USD"},{"qty":10,"price":"$1.09500","currency":"USD"},{"qty":100,"price":"$0.85350","currency":"USD"},{"qty":500,"price":"$0.70510","currency":"USD"},{"qty":1000,"price":"$0.55666","currency":"USD"},{"qty":2000,"price":"$0.51955","currency":"USD"},{"qty":6000,"price":"$0.49357","currency":"USD"},{"qty":10000,"price":"$0.48405","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f799d3ee60974412bdd654cea4bd57a8.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFR3910TRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFR3910TRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}