{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IRFR2307ZTRLPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IRFR2307ZTRLPBF","canonicalUrl":"https://icboms.com/infineon/IRFR2307ZTRLPBF","factsUrl":"https://icboms.com/api/mcp/products/IRFR2307ZTRLPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IRFR2307ZTRLPBF, N-Channel MOSFET, 75 V Vdss, 42 A continuous drain, 16 mOhm Rds(on) at 32 A, 10 V gate drive, DPAK surface-mount package, -55 to 175 °C junction temperature.","salesMarkdown":"## 75 V, 42 A N-channel HEXFET in a DPAK — switching loss and conduction loss trade-off The Infineon IRFR2307ZTRLPBF is a 75 V, 42 A N-channel MOSFET from the HEXFET series, built on a planar stripe technology that balances low on-resistance with moderate gate charge. The 16 mOhm Rds(on) at 32 A, 10 V gate drive means conduction losses stay under 2 W at 10 A load current, which keeps the DPAK package within its thermal budget without forced air in many industrial and automotive applications. ## 16 mOhm on-resistance — what it costs to switch Rds(on) of 16 mOhm is specified at Vgs=10 V and 25 °C junction. At 100 °C junction the on-resistance roughly doubles per the normalised curve typical of planar MOSFETs, so budget 32 mOhm for worst-case conduction loss in a hot enclosure. The 75 nC total gate charge at 10 V means a 1 A gate driver can switch this FET at about 130 kHz before gate-drive losses become significant — useful for a 48 V DC-DC converter or a 12 V automotive load-switch. Input capacitance Ciss is 2190 pF at Vds=25 V. That is moderate for a 42 A device — the Miller plateau is manageable with a standard totem-pole driver, but a 10 Ω series gate resistor is advisable to damp ringing on the gate trace. ## 175 °C junction — where this part lives The DPAK package (TO-252-3) has an exposed tab on the drain — the copper area on the PCB landing pad sets the thermal resistance. With 1 oz copper and a 2-inch-square pad, RthJA drops below 60 °C/W, keeping the junction under 150 °C at 42 A pulsed duty. Power dissipation is rated at 110 W at case temperature Tc=25 °C. That figure is for an infinite heatsink — real-world dissipation is limited by the PCB copper and any clip-on heatsink. For continuous 20 A load, expect the case to run 40-50 °C above ambient without a heatsink. ## Active production, ROHS3 compliant — no LTB clock ticking This is an Infineon part, not a second-source cross from another foundry.","metaTitle":"IRFR2307ZTRLPBF N-Channel MOSFET, 75V 42A DPAK, 16mOhm","metaDescription":"Infineon IRFR2307ZTRLPBF N-channel HEXFET MOSFET, 75V Vdss, 42A continuous drain, 16mOhm Rds(on) at 32A. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 100µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"16mOhm @ 32A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"D-Pak","Gate Charge (Qg) (Max) @ Vgs":"75 nC @ 10 V","Drain to Source Voltage (Vdss)":"75 V","Input Capacitance (Ciss) (Max) @ Vds":"2190 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"42A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.51","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.51000","currency":"USD"},{"qty":10,"price":"$1.25700","currency":"USD"},{"qty":100,"price":"$1.00010","currency":"USD"},{"qty":500,"price":"$0.84624","currency":"USD"},{"qty":1000,"price":"$0.71803","currency":"USD"},{"qty":3000,"price":"$0.68213","currency":"USD"},{"qty":6000,"price":"$0.65648","currency":"USD"},{"qty":9000,"price":"$0.63475","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/eb6cb4d006ac43f8864e1054bf17bb10.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IRFR2307ZTRLPBF?","answer":"The maximum Rds(on) is 16 mOhm at a drain current of 32 A and a gate-source voltage of 10 V. This is the conduction-loss spec used for thermal and efficiency calculations."},{"question":"Is IRFR2307ZTRLPBF RoHS compliant?","answer":"Yes, the IRFR2307ZTRLPBF is ROHS3 compliant, meaning it meets the latest EU RoHS directive without exemptions."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IRFR2307ZTRLPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IRFR2307ZTRLPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}